Freescale Semiconductor
Technical Data
Document Number: MRF6S23140H
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C WLL applications.
•
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1300 mA,
P
out
= 28 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.2 dB
Drain Efficiency — 25%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S23140HR3
MRF6S23140HSR3
2300 - 2400 MHz, 28 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S23140HR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S23140HSR3
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
200
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82°C, 140 W CW
Case Temperature 75°C, 28 W CW
Symbol
R
θJC
Value
(1,2)
0.29
0.33
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S23140HR3 MRF6S23140HSR3
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1300 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
500
μAdc
μAdc
nΑdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1300 mA, P
out
= 28 W Avg., f1 = 2300 MHz,
f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in 3.84 MHz Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
13
23
—
—
—
15.2
25
- 37
- 40
- 15
17
—
- 35
- 38
—
dB
%
dBc
dBc
dB
MRF6S23140HR3 MRF6S23140HSR3
2
RF Device Data
Freescale Semiconductor
+
Z12
R1
V
BIAS
+
C12
+
C11
C10
C9
Z11
C3
RF
INPUT
Z7
Z6
Z13
Z8
DUT
Z9
Z10
C6
B1
C5
C17
C18
C19
C20
V
SUPPLY
Z15
Z16
Z17
C2
Z18
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
Z5
C4
B2
+
C16
+
C15
C14
C13
Z14
C8
+
C7
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11, Z13
Z12, Z14
Z15
Z16
Z17
Z18
PCB
C21
C22
C23
C24
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
0.678″
0.420″
0.845″
0.175″
0.025″
0.514″
0.507″
0.097″
x 0.068″
x 0.068″
x 0.200″
x 0.530″
x 0.530″
x 0.050″
x 0.050″
x 1.170″
0.193″ x 1.170″ Microstrip
0.712″ x 0.095″ Microstrip
0.098″ x 0.095″ Microstrip
0.115″ x 0.550″ Microstrip
0.250″ x 0.110″ Microstrip
0.539″ x 0.068″ Microstrip
0.956″ x 0.068″ Microstrip
Taconic RF - 35, 0.030″,
ε
r
= 3.5
Figure 1. MRF6S23140HR3(SR3) Test Circuit Schematic
Table 5. MRF6S23140HR3(SR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C3, C4, C5, C6, C7, C8
C9, C13
C10, C14, C17, C21
C11, C15
C12, C16
C18, C19, C22, C23
C20, C24
R1
Description
Ferrite Beads, Short
5.6 pF 100B Chip Capacitors
0.01
μF,
100 V Chip Capacitors
2.2
μF,
50 V Chip Capacitors
22
μF,
25 V Tantalum Chip Capacitors
47
μF,
16 V Tantalum Chip Capacitors
10
μF,
50 V Chip Capacitors (2220)
330
μF,
63 V Electrolytic Capacitors
10
Ω,
1/8 W Chip Resistor (1206)
Part Number
2743019447
100B5R6CP500X
C1825C103J1RAC
C1825C225J5RAC
ECS - T1ED226R
T491D476K016AS
GRM55DR61H106KA88B
NACZF331M63V
Manufacturer
Fair - Rite
ATC
Kemet
Kemet
Panasonic TE series
Kemet
Murata
Nippon
MRF6S23140HR3 MRF6S23140HSR3
RF Device Data
Freescale Semiconductor
3
C6
R1
B1
C5
C3
C12 C11
C10*
C9*
C17
C19
C20
C18
CUT OUT AREA
C1
C2
MRF6S23140H
Rev 3
C21
C22
C4
C16
B2
C15
C14*
* Stacked
C13*
C8
C24
C7
C23
Figure 2. MRF6S23140HR3(SR3) Test Circuit Component Layout
MRF6S23140HR3 MRF6S23140HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
15.6
15.5
G
ps
, POWER GAIN (dB)
15.4
V
DD
= 28 Vdc
15.3 P
out
= 28 W (Avg.)
I
DQ
= 1300 mA, 2−Carrier W−CDMA
15.2 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
15.1
15
14.9
14.8
2270
IM3
IRL
ACPR −40
2290
2310
2330
2350
2370
2390
2410
−42
2430
G
ps
28
27
26
η
D
25
−34
−36
−38
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−6
−9
−12
−15
−18
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−6
−9
−12
−15
−18
IRL, INPUT RETURN LOSS (dB)
1950 mA
1625 mA
−50
975 mA
−60
300
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
1300 mA
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P
out
= 28 Watts Avg.
15.1
15
G
ps
, POWER GAIN (dB)
14.9 V
DD
= 28 Vdc
P
out
= 56 W (Avg.)
14.8 I
DQ
= 1300 mA, 2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
14.7 PAR = 8.5 dB @ 0.01% Probability (CCDF)
14.6
IM3
14.5
14.4
14.3
2270
IRL
ACPR
G
ps
η
D
38
37
36
35
−25
−27
−29
−31
2290
2310
2330
2350
2370
2390
2410
−33
2430
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P
out
= 56 Watts Avg.
18
17
G
ps
, POWER GAIN (dB)
16
15
975 mA
14
13
12
11
1
650 mA
V
DD
= 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
100
I
DQ
= 1950 mA
1625 mA
1300 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
V
DD
= 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
I
DQ
= 650 mA
−40
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S23140HR3 MRF6S23140HSR3
RF Device Data
Freescale Semiconductor
5
IRL, INPUT RETURN LOSS (dB)
嵌入式系统
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