PLANETA
The RF Line
NPN Silicon
High-Frequency Transistor
DESCRIPTION
The BFR91A is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
This small-signal p lastic transistor offers superior quality and
performance at low cost.
BFR91A
1
3
2
FEATURES
1 – Base
2 – Collector
3 – Emitter
High Gain-Bandwidth Products
f
T
= 6.0 GHz (Typ) @ 30 mA
Low Noise Figure
N
F
= 1.6 dB (Typ) @ 800 MHz
High Gain
G
PS
= 13.0 dB (Typ) @ 800 MHz
SOT37
JEDEC
EIAJ
GOST
Weight:
TO-50
–
KT-29
0.2g
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C)
Rating
Collector- Emitter Voltage
Collector- Base Voltage
Emitter- Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
JMAX
T
J
T
STG
Value
12
20
2
50
300
150
-45
to
+70
-65
to
+150
Unit
V
V
V
mA
mW
°C
°C
°C
THERMAL CHARACTERISTIC
Thermal Resistance, Junction to Case
R
Θ
JC
400
°C/W
ORDERING INFORMATION
Device
BFR91A
Marking
BFR91A
Package
SOT-37
Quantity
Packing Style
1 Kpcs / plastic bags In bulk
PLANETA JS
, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
© July 2000 Rev 1
Ph./Fax:
+7–816–2231736
E-mail:
planeta@novgorod.net
http://www.novgorod.net/~planeta
BFR91A
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
Characteristic
DC CHARACTERISTICS
Collector Cutoff Current,
I
E
= 0mA, V
CB
=10V
Emitter Cutoff Current,
I
C
= 0mA, V
EB
= 2V
Collector – Emitter Breakdown Voltage,
I
C
= 1mA, I
B
= 0mA
DC Current Gain,
I
E
=30mA, V
CB
= 5V
Collector – Emitter Saturation Voltage,
I
C
= 1mA, I
B
= 0mA
AC CHARACTERISTICS
Transition Frequency,
I
C
=30mA, V
CB
= 5V, f=300MHz
Collector-Base Capacitance,
I
E
= 0mA, V
CB
=10V, f= 1MHz
Noise Figure,
I
E
= 5mA, V
CE
= 8V, f=800MHz
Power Gain,
I
E
=30mA, V
CE
= 8V, f=800MHz
h
FE
CLASSIFICATION
Class
h
FE
K
50
to
300
H
50
to
100
F
80
to
160
E
125
to
250
Symbol
I
CBO
–
I
EBO
–
V
(BR)CEO
12
h
FE
50
V
CE(sat)
–
f
T
4.5
C
cb
–
N
F
–
G
PS
12.0
13.0
–
1.6
2.0
dB
0.4
0.9
dB
6.0
–
pF
100
400
GHz
120
300
mV
–
–
–
–
10
V
–
100
µA
Min
Typ
Max
Unit
nA
TIPICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
350
1
300
C
cb
- Collector Base Capacitance (pF
P
tot
- Total Power Dissipation (mW
0,8
250
200
0,6
150
0,4
100
0,2
V
CB
=10V
f=1MHZ
50
0
0
20
40
60
80
100
120
140
160
0
0
5
10
15
20
V
CB
- Collector Base Voltage (V)
T
amb
- Ambient Temperature (°C)
Figure 1
. Total Power Dissipation vs.
Ambient Temperature
Ph./Fax:
+7–816–2231736
E-mail:
planeta@novgorod.net
http://www.novgorod.net/~planeta
Figure 2
. Collector – Base Capacitance vs.
Collector – Base Voltage
PLANETA JSC,
2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
© July 2000 Rev 1
2
BFR91A
TIPICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
7
3,5
6
f
T
- Transition Frequency (GHz
3
4
N
F
- Noise Figure (dB)
5
2,5
2
3
1,5
2
V
CB
=5V
f=300MHZ
1
V
CE
=8V
f=800MHZ
0,5
1
0
0
5
10
15
20
25
30
35
40
45
50
0
0
5
10
15
20
25
30
35
40
I
E
- Emitter Current (mA)
I
E
- Emitter Current (mA
Figure 3.
Transition Frequency vs.
Emitter Current
14
140
Figure 4.
Noise Figure vs.
Emitter Current
12
120
G
PS
- Power Gain (dB)
8
h
FE
- DC Current Gain
10
100
80
6
60
4
V
CE
=8V
f=800MHZ
40
V
CB
=5V
20
2
0
0
5
10
15
20
25
30
35
40
0
0
5
10
15
20
25
30
I
E
- Emitter Current (mA
I
E
- Emitter Current (mA
Figure 5.
Power Gain vs.
Emitter Current
Figure 6.
DC Current Gain vs.
Emitter Current+
PLANETA JS
, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
© July 2000 Rev 1
Ph./Fax:
+7–816–2231736
E-mail:
planeta@novgorod.net
http://www.novgorod.net/~planeta
3
BFR91A
PACKAGE DIMENSIONS in mm
PLASTIC CASE KT-29
Ph./Fax:
+7–816–2231736
E-mail:
planeta@novgorod.net
http://www.novgorod.net/~planeta
PLANETA JSC,
2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
© July 2000 Rev 1
4
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