The AS6WA5128 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as
524,288 words × 8 bits. It is designed for memory applications where slow data access, low power, and simple interfacing
are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 55 ns are ideal for low-power applications. Active high and low chip
selects (CS) permit easy memory expansion with multiple-bank memory systems.
When CS is high, the device enters standby mode: the AS6WA5128 is guaranteed not to exceed 72
µW
power consumption
at 3.6V and 55ns. The device also returns data when V
CC
is reduced to 1.5V for even lower power consumption.
A write cycle is accomplished by asserting write enable ( WE) and chip select (CS) low. Data on the input pins I/O1–I/O8 is
written on the rising edge of WE (write cycle 1) or CS (write cycle 2). To avoid bus contention, external devices should drive
I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE), chip select (CS), with write enable (WE) High. The chip
drives I/O pins with the data word referenced by the input address. When either chip select or output enable is inactive, or
write enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are CMOS-compatible, and operation is from a single 3.0 to 3.6V supply. The device is available
in the JEDEC standard 36(48)-ball FBGA package.
Absolute maximum ratings
Parameter
Voltage on V
CC
relative to V
SS
Voltage on any I/O pin relative to GND
Power dissipation
Storage temperature (plastic)
Temperature with V
CC
applied
DC output current (low)
Device
Symbol
V
tIN
V
tI/O
P
D
T
stg
T
bias
I
OUT
Min
–0.5
–0.5
–
–65
–55
–
1.0
+150
+125
20
Max
V
CC
+ 0.5
Unit
V
V
W
°C
°C
mA
Note: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this spec ification is not implied. Expo-
sure to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CS
H
L
L
L
L
WE
X
X
H
H
L
OE
X
X
H
L
X
Supply Current
I
SB
I
SB
I
CC
I
CC
I
CC
I/O1–I/O8
High Z
High Z
High Z
D
OUT
D
IN
Mode
Standby (I
SB
)
Standby (I
SB
)
Output disable (I
CC
)
Read (I
CC
)
Write (I
CC
)
Key: X = Don’t care, L = Low, H = High.
2
ALLIANCE SEMICONDUCTOR
10/6/00
AS6WA5128
®
Recommended operating condition (over the operating range)
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