CM1406
4 Channel EMI Filter Array with ESD Protection
Features
•
•
•
•
•
•
Four channels of EMI filtering with ESD protection
Greater than 30dB of attenuation from 800MHz to
3GHz
±15kV
ESD protection (IEC 61000-4-2, contact
discharge)
±30kV
ESD protection (HBM)
8-lead TDFN package (2mm x 2mm), 0.5mm pitch
Lead-free version available
Product Description
California Micro Devices's CM1406 is an EMI filter
array with ESD protection, which integrates 4 pi filters
(C-R-C). The CM1406 has component values of 15pF-
200
Ω
-15pF. The parts include ESD protection diodes
on every pin, which provide a very high level of protec-
tion for sensitive electronic components that may be
subjected to electrostatic discharge (ESD). The ESD
diodes connected to the filter ports are designed and
characterized to safely dissipate ESD strikes of
±15kV
contact discharge, twice the specification requirement
of the IEC 61000-4-2, Level 4 international standard.
Using the MIL-STD-883 (Method 3015) specification
for Human Body Model (HBM) ESD, the pins are pro-
tected for contact discharges at greater than
±30kV.
This device is particularly well suited for portable elec-
tronics (e.g. mobile handsets, PDAs, notebook comput-
ers) because of its small package format and easy-to-
use pin assignments. In particular, the CM1406 is
ideal for EMI filtering and protecting data lines from
ESD in wireless handsets.
The CM1406 is available in a space-saving, low-profile,
8-lead, 2mm x 2mm TDFN package. It is fabricated
with California Micro Devices' Centurion
™
process and
available with optional lead-free finishing.
Applications
•
•
•
I/O port protection for mobile handsets, notebook
computers, PDAs etc.
EMI filtering for data ports in cell phones, PDAs or
notebook computers.
EMI filtering for LCD and chip-to-chip data lines
Electrical Schematic
200Ω
FILTERn*
15pF
15pF
FILTERn*
GND
1 of 4 EMI Filtering + ESD Channels
* See Package/Pinout Diagram for expanded pin information.
©
2004 California Micro Devices Corp. All rights reserved.
08/16/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
1
CM1406
PACKAGE / PINOUT DIAGRAMS
TOP VIEW
(Pins Down View)
BOTTOM VIEW
(Pins Up View)
8 7 6 5
1 2 3 4
Pin 1
Marking
N06
4x
GND
PAD
8 7 6 5
1 2 3 4
CM1406
8-Lead TDFN Package
Notes:
1) This drawing is not to scale.
2) See Ordering Information section below for device specific marking.
PIN DESCRIPTIONS
PIN(s)
1
2
3
4
GND Pad
NAME
FILTER1
FILTER2
FILTER3
FILTER4
GND
DESCRIPTION
Filter Channel 1
Filter Channel 2
Filter Channel 3
Filter Channel 4
Device Ground
PIN(s)
5
6
7
8
NAME
FILTER4
FILTER3
FILTER2
FILTER1
DESCRIPTION
Filter Channel 4
Filter Channel 3
Filter Channel 2
Filter Channel 1
Ordering Information
PART NUMBERING INFORMATION
Standard Finish
Leads/Pins
8
Package
TDFN-08
Ordering Part
Number
1
CM1406-04DF
Part Marking
N06 4F
Lead-free Finish
Ordering Part
Number
1
CM1406-04DE
Part Marking
N06 4E
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
©
2004 California Micro Devices Corp. All rights reserved.
2
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
08/16/04
CM1406
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
RATING
-65 to +150
100
300
UNITS
°C
mW
mW
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL
R
C
V
DIODE
I
LEAK
V
SIG
PARAMETER
Resistance
Capacitance
Diode Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
Cut-off Frequency
,
Z
SOURCE
=50Ω Z
LOAD
=50Ω
At 2.5V DC, 1MHz, 30mV
AC
I
DIODE
= 10µA
V
DIODE
= 3.3V
I
LOAD
= 10mA
I
LOAD
= -10mA
Notes 2,4 and 5
±30
±15
Notes 2,3,4 and 5
+12
-7
R = 200Ω C = 15pF
,
105
MHz
V
V
kV
kV
5.6
-0.4
CONDITIONS
MIN
160
12
5.5
100
6.8
-0.8
9.0
-1.5
TYP
200
15
MAX
240
18
UNITS
Ω
pF
V
nA
V
V
V
ESD
V
CL
f
C
Note 1: T
A
=25
°
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin 1,
then clamping voltage is measured at Pin 8.
Note 4: Unused pins are left open
Note 5: These parameters are guaranteed by design and characterization.
©
2004 California Micro Devices Corp. All rights reserved.
08/16/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
3
CM1406
Performance Information
Typical Filter Performance
(nominal conditions unless specified otherwise, 0V DC Bias, 50 Ohm Environment)
Figure 1. Channel 1 (Pin 1 - Pin 8) EMI Filter Performance
Figure 2. Channel 2 (Pin 2 - Pin 7) EMI Filter Performance
©
2004 California Micro Devices Corp. All rights reserved.
4
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
08/16/04
CM1406
Performance Information (cont’d)
Typical Filter Performance
(nominal conditions unless specified otherwise, 0V DC Bias, 50 Ohm Environment)
Figure 3. Channel 3 (Pin 3 - Pin 6) EMI Filter Performance
Figure 4. Channel 4 (Pin 4 - Pin 5) EMI Filter Performance
©
2004 California Micro Devices Corp. All rights reserved.
08/16/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
5
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