Freescale Semiconductor
Technical Data
Document Number: MHL9838N
Rev. 7, 8/2006
Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra- linear amplifier applications in
50 ohm system
s operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA and CDMA.
•
Third Order Intercept: 50 dBm Typ
•
Power Gain: 31 dB Typ (@ f = 880 MHz)
•
Input and Output VSWR
v
1.5:1
Features
•
Excellent Phase Linearity and Group Delay Characteristics
•
Ideal for Feedforward Base Station Applications
•
For Use in TDMA and CDMA Multi - Carrier Applications
•
N Suffix Indicates Lead - Free Terminations
MHL9838N
800 - 925 MHz
8.0 W, 31 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings
(T
C
= 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Symbol
V
DD
P
in
T
stg
T
C
Value
30
+6
- 40 to +100
- 20 to +100
Unit
Vdc
dBm
°C
°C
Table 2. Electrical Characteristics
(V
DD
= 28 Vdc, T
C
= 25°C; 50
Ω
System)
Characteristic
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Compression
(f = 880 MHz)
(f = 800 - 925 MHz)
(f = 880 MHz)
Symbol
I
DD
G
p
G
F
P1dB
ITO
NF
Min
—
29.5
—
—
49
—
Typ
770
31
0.1
39
50
3.7
Max
800
32.5
0.3
—
—
4.5
Unit
mA
dB
dB
dBm
dBm
dB
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
Noise Figure
(f = 925 MHz)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MHL9838N
1
RF Device Data
Freescale Semiconductor
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©
Freescale Semiconductor, Inc. 2006. All rights reserved.
MHL9838N
Document Number:
RF Device Data
MHL9838N
Rev. 7, 8/2006
Freescale Semiconductor
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