NCP434, NCP435
2A Ultra-Small Controlled
Load Switch with
Auto-Discharge Path
The NCP434 and NCP435 are a low Ron MOSFET controlled by
external logic pin, allowing optimization of battery life, and portable
device autonomy.
Indeed, due to a current consumption optimization with PMOS
structure, leakage currents are eliminated by isolating connected IC’s
on the battery when not used.
Output discharge path is also embedded to eliminate residual
voltages on the output (NCP435 only).
Available in wide input voltage range from 1.0 V to 4.0 V, and a very
small 0.96 x 0.96 mm WLCSP4, 0.5 mm pitch.
Features
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MARKING
DIAGRAM
1
WLCSP4
CASE 567FG
XX
A
Y
W
XX
AYW
•
•
•
•
•
•
•
•
•
•
•
•
1 V − 3.6 V Operating Range
29 mW P MOSFET at 3.3 V
DC current up to 2 A
Output Auto−discharge (NCP435)
Active high EN pin
WLCSP4 0.96 x 0.96 mm
These are Pb−Free Devices
= Specific Device Code
= Assembly Location
= Year
= Wafer Lot
PIN DIAGRAM
1
2
A
OUT
IN
Typical Applications
Mobile Phones
Tablets
Digital Cameras
GPS
Portable Devices
B
GND
EN
(Top View)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 9 of this data sheet.
V+
LS
NCP435
DCDC Converter
or
A2
B2
IN
OUT
A1
B1
Platform IC’n
LDO
EN GND
ENx
EN
0
Figure 1. Typical Application Circuit
©
Semiconductor Components Industries, LLC, 2013
1
August, 2016 − Rev. 5
Publication Order Number:
NCP435/D
NCP434, NCP435
PIN FUNCTION DESCRIPTION
Pin Name
IN
GND
EN
OUT
Pin Number
A2
B1
B2
A1
Type
POWER
POWER
INPUT
OUTPUT
Description
Load−switch input voltage; connect a 1
mF
or greater ceramic capacitor from IN to GND as
close as possible to the IC.
Ground connection.
Enable input, logic high turns on power switch.
Load−switch output; connect a 1
mF
ceramic capacitor from OUT to GND as close as
possible to the IC is recommended.
BLOCK DIAGRAM
IN: Pin A2
OUT: Pin A1
Gate driver and soft
start control
Control
logic
EN: Pin B2
EN block
Optional:
NCP435
GND: Pin B1
Figure 2. Block Diagram
MAXIMUM RATINGS
Rating
IN, OUT, EN, Pins
From IN to OUT Pins: Input/Output
Maximum Junction Temperature
Storage Temperature Range
Moisture Sensitivity (Note 1)
Symbol
V
EN ,
V
IN ,
V
OUT
V
IN ,
V
OUT
T
J
T
STG
MSL
Value
−0.3 to + 4.0
0 to + 4.0
−40 to + 125
−40 to + 150
Level 1
Unit
V
V
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020.
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2
NCP434, NCP435
OPERATING CONDITIONS
Symbol
V
IN
V
EN
T
A
C
IN
C
OUT
R
qJA
I
OUT
P
D
Parameter
Operational Power Supply
Enable Voltage
Ambient Temperature Range
Decoupling input capacitor
Decoupling output capacitor
Thermal Resistance Junction−to−Air
Maximum DC current
Power Dissipation Rating (Note 7)
T
A
≤
25°C
T
A
= 85°C
WLCSP package
WLCSP package
0.5
0.2
WLCSP package (Note 6)
Conditions
Min
1.0
0
−40
1
1
100
2
25
Typ
Max
3.6
3.6
+85
°C
mF
mF
°C/W
A
W
W
Unit
V
2. According to JEDEC standard JESD22−A108.
3. This device series contains ESD protection and passes the following tests:
4. Human Body Model (HBM)
±4.0
kV per JEDEC standard: JESD22−A114 for all pins.
Machine Model (MM)
±250
V per JEDEC standard: JESD22−A115 for all pins.
Charge Device Model (CDM)
±2.0
kV per JEDEC standard: JESD22−C101 for all pins.
5. Latch up Current Maximum Rating:
±100
mA per JEDEC standard: JESD78 class II.
6. The R
qJA
is dependent of the PCB heat dissipation and thermal via.
7. The maximum power dissipation (
PD
) is given by the following formula:
P
D
+
T
JMAX
*
T
A
R
qJA
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NCP434, NCP435
ELECTRICAL CHARACTERISTICS
Min and Max Limits apply for T
A
between −40°C to +85°C for
VIN
between 1.0 V to 3.6 V
(Unless otherwise noted). Typical values are referenced to T
A
= +25°C and V
IN
= 3.3 V (Unless otherwise noted).
Symbol
POWER SWITCH
Static drain−source on−
state resistance
V
IN
= 4 V
V
IN
= 3.3 V
V
IN
= 3.3 V
V
IN
= 1.8 V
V
IN
= 1.2 V
V
IN
= 1.1 V
R
DIS
T
R
T
F
T
on
T
en
V
IH
V
IL
R
EN
Output discharge path
Output rise time
Output fall time
Gate turn on
Enable time
High−level input voltage
Low−level input voltage
Pull down resistor
5.1
EN = low
V
IN
= 3.3 V
V
IN
= 3.3 V
V
IN
= 3.3 V
V
IN
= 3.3 V
T
A
= 25°C, I = 200 mA (Note 9)
T
A
= 25°C, I = 200 mA
T
A
= 85°C
T
A
= 25°C, I = 200 mA
T
A
= 25°C, I = 200 mA
T
A
= 25°C, I = 100 mA
V
IN
= 3.3 V, NCP435 only
C
LOAD
= 1
mF,
R
LOAD
= 25
W
(Note 8)
C
LOAD
= 1
mF,
R
LOAD
= 25
W
(Note 8)
Gate turn on + Output rise time
From EN low to high to
V
OUT
= 10% of fully on
35
20
65
30
0.9
0.5
7
43
80
110
65
61
42
126
66
90
90
70
190
100
W
ms
ms
ms
ms
V
V
MW
27
29
30
34
38
52
120
mW
Parameter
Conditions
Min
Typ
Max
Unit
R
DS(on)
QUIESCENT CURRENT
I
Q
Current consumption
V
IN
= 3.3 V, EN = low, No load
V
IN
= 3.3 V, EN = high, No load
0.15
0.3
0.6
0.6
mA
mA
8. Parameters are guaranteed for C
LOAD
and R
LOAD
connected to the OUT pin with respect to the ground
9. Guaranteed by design and characterization, not production tested.
TIMINGS
V
IN
EN
V
OUT
T
EN
T
R
T
DIS
T
F
T
ON
T
OFF
Figure 3. Enable, Rise and fall time
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NCP434, NCP435
TYPICAL CHARACTERISTICS
Figure 4. R
DS(on)
(mW) vs. V
IN
(V) from
1 V to 2. 6 V
Figure 5. R
DS(on)
(mW) vs. V
IN
(V) from
1 V to 4 V
Figure 6. R
DS(on)
(mW) vs. I
load
(mA)
Figure 7. R
DS(on)
(mW) vs. Temperature
(5C)
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