Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)
Si1902DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.25
0.30
0.16
- 55 to 150
0.70
0.50
1
0.23
0.27
0.14
W
°C
5s
20
±12
0.66
0.48
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
5
s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
360
400
300
Maximum
415
460
350
°C/W
Unit
Document Number: 71080
S11-2043-Rev. J, 17-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1902DL
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 0.23 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 20
I
D
0.5 A, V
GEN
= 4.5 V, R
g
= 6
f = 1 MHz
0.2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 0.66 A
0.8
0.06
0.30
1
10
16
10
10
20
1.7
20
30
20
20
40
ns
1.2
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V
GS
= 0 V, T
J
= 85°C
V
DS
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 0.66 A
V
GS
= 2.5 V, I
D
= 0.40 A
V
DS
= 10 V, I
D
= 0.66 A
I
S
= 0.23 A, V
GS
= 0 V
1
0.320
0.560
1.5
0.8
1.2
0.385
0.630
0.6
1.5
± 100
1
5
V
nA
µA
A
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.0
V
GS
= 5 V thru 2.5 V
0.8
I
D
- Drain Current (A)
2V
0.6
I
D
- Drain Current (A)
0.8
1.0
0.6
0.4
0.4
T
C
= 125 °C
0.2
0.2
1.5 V
1V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 °C
- 55 °C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 71080
S11-2043-Rev. J, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71080.
www.vishay.com
4
Document Number: 71080
S11-2043-Rev. J, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
