Power Module
1200V 75A IGBT Module
MG1275S-BA1MM
Features
• Ultra Low Loss
• High Ruggedness
• High Short Circuit
Capability
Applications
• Inverter
• Converter
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E71639
RoHS
®
• Positive Temperature
Coefficient
• With Fast Free-Wheeling
Diodes
• SMPS and UPS
• Induction Heating
• Welder
Module Characteristics
(T
C
= 25°C, unless otherwise specified)
Symbol
R
thJC
R
thJCD
Torque
Torque
Weight
Parameters
Junction-to-Case Thermal
Resistance
Module-to-Sink
Module Electrodes
Test Conditions
Per IGBT
Per Inverse Diode
Recommended (M6)
Recommended (M5)
3
2.5
150
Min
Typ
Max
0.2
0.5
5
5
Unit
K/W
K/W
N·m
N·m
g
Absolute Maximum Ratings
(T
C
= 25°C, unless otherwise specified)
Symbol
IGBT
V
CES
V
GES
I
C
I
Cpuls
P
tot
T
J
T
STG
V
isol
Diode
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG1275S-BA1MM
Parameters
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Pulsed Collector Current
Power Dissipation Per IGBT
Junction Temperature Range
Storage Temperature Range
Insulation Test Voltage
Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward
Current
Test Conditions
Values
1200
±20
Unit
V
V
A
A
A
W
°C
°C
V
V
A
A
A
A
T
C
=25°C
T
C
=80°C
T
C
=25°C, t
p
=1ms
T
C
=80°C, t
p
=1ms
105
75
210
150
630
-40 to +150
-40 to +125
AC, t=1min
3000
1200
T
C
=25°C
T
C
=80°C
T
J
=45°C, t=10ms, Sine
T
J
=45°C, t=8.3ms, Sine
90
60
90
430
450
1
56
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
1200V 75A IGBT Module
Electrical and Thermal Specifications
(T
C
= 25°C, unless otherwise specified)
Symbol
IGBT
V
GE(th)
V
CE(sat)
I
CES
I
GES
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Diode
V
F
t
rr
I
RRM
Q
rr
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
I
F
=75A , V
GE
=0V, T
J
=25°C
I
F
=75A , V
GE
=0V, T
J
=125°C
I
F
=75A , V
R
=800V
di
F
/dt=-1000A/μs
T
J
=125°C
2.0
1.7
200
70
8.2
2.48
2.2
V
V
ns
A
μC
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Energy
Turn - off Energy
V
CC
=600V
I
C
=75A
R
G
=15Ω
V
GE
=±15V
Inductive Load
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
V
CE
=25V, V
GE
=0V, f =1MHz
V
CE
=V
GE
, I
C
=3mA
I
C
=75A, V
GE
=15V, T
J
=25°C
I
C
=75A, V
GE
=15V, T
J
=125°C
V
CE
=1200V, V
GE
=0V, T
J
=25°C
V
CE
=1200V, V
GE
=0V, T
J
=125°C
V
CE
=0V,V
GE
=±20V
V
CC
=600V, I
C
=75A , V
GE
=±15V
-100
780
5.52
0.4
0.26
150
160
65
65
440
500
55
70
7
.45
10.3
4.9
7
.8
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
nF
5.0
6.2
1.8
2.0
0.2
2
100
0.5
7
.0
V
V
V
mA
mA
nA
nC
Parameters
Test Conditions
Min
Typ
Max
Unit
MG1275S-BA1MM
1
57
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
1200V 75A IGBT Module
Figure 1: Typical Output Characteristics
150
125
100
I
C
(A)
75
T
J
=125°C
Figure 2: Typical Transfer characteristics
150
125
100
I
C
(A)
V
CE
=20V
T
J
=25°C
75
50
T
J
=125°C
50
25
0
0
25
0.5
1
1.5
2
V
CE(sat)
V
2.5
3
3.5
0
T
J
=25°C
0
2
4
6
8
V
GE
V
10
12
14
Figure 3: Switching Energy vs. Collector Current
60
50
40
30
E
on
V
CC
=600V
R
G
=15ohm
V
GE
=±15V
T
J
=125°C
Figure 4: Switching Energy vs. Gate Resistor
30
25
20
V
CC
=600V
I
C
=75A
V
GE
=±15V
T
J
=125°C
E
on
E
on
E
off
(mJ)
E
on
E
off
(mJ)
15
10
5
0
E
off
20
10
0
0
E
off
25
50
75 100
I
C
A
125 150
175
0
10
20
30
40
R
G
ohm
50
60
70
Figure 5: Switching Times vs. Collector Current
1000
t
d(off)
Figure 6: Switching Times vs. Gate Resistor
1000
t
d(off)
t (ns)
t (ns)
100
t
d(on)
t
f
100
t
d(on)
t
f
t
r
t
r
10
0
V
CC
=600V
R
G
=15ohm
V
GE
=±15V
T
J
=125°C
20
40
60
I
C
80
A
100 120
140
10
V
CC
=600V
I
C
=75A
V
GE
=±15V
T
J
=125°C
0
10
20
30
40
R
G
ohm
50
60
70
MG1275S-BA1MM
3
58
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
1200V 75A IGBT Module
Figure 7: Gate Charge characteristics
25
20
15
10
5
0
0
V
CC
=600V
I
C
=75A
T
J
=25°C
Figure 8: Typical Capacitances vs. V
CE
10
C
ies
V
GE
=0V
f=1MHz
V
GE
(V)
C (nF)
1
C
oes
C
res
0.1
0.2
0.3 0.4
Q
g
µC
0.5
0.6
0.7
0.1
0
5
10
15
20
V
CE
V
25
30
35
Figure 9: Reverse Biased Safe Operating Area
250
200
150
100
50
0
0
T
J
=150°C
T
C
=25°C
V
GE
=15V
Figure 10: Short Circuit Safe Operating Area
1200
1000
800
I
Cpuls
(A)
I
Csc
(A)
600
400
200
T
J
=150°C
T
C
=25°C
V
GE
=15V
t
sc
10µs
200
400
600 800 1000 1200 1400
V
CE
V
0
0
200
400 600
V
CE
800 1000 1200 1400
V
Figure 11: Rated Current vs. T
C
150
125
100
I
C
(A)
T
J
=150°C
V
GE
15V
Figure 12: Diode Forward Characteristics
150
125
100
T
J
=125°C
50
25
0
0
MG1275S-BA1MM
I
F
(A)
75
75
50
T
J
=25°C
25
25
50
75 100 125 150 175
T
C
Case Temperature(°C)
4
59
0
0
0.5
1.0
1.5 2.0
V
F
V
2.5
3
3.5
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
1200V 75A IGBT Module
Figure 13: Transient Thermal Impedance of IGBT
1
Figure 14: Transient Thermal Impedance of Diode
1
10
Z
thJC
(K/W)
-1
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
-1
10
-2
10
-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10
-3
Z
thJC
(K/W)
10
-3
10
-4
10
-4
10
10
1
10
Rectangular Pulse Duration (seconds)
-3
-2
-1
10
-4
-1
10
-4
10
-3
10
-2
10
1
Rectangular Pulse Duration (seconds)
Dimensions-Package S
Circuit Diagram
1
3
2
4
5
6
7
MG1275S-BA1MM
60
5
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
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