VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 6 A
Base
common
cathode
2
FEATURES
• 175 °C T
J
operation
• Center tap TO-220 package
• Low forward voltage drop
• High frequency operation
TO-220AB
2
Anode Common Anode
1 cathode 3
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
Available
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2x6A
35 V, 40 V, 45 V
0.53 V
7 mA at 125 °C
175 °C
Common cathode
8 mJ
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-12CTQ... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform
Range
t
p
= 5 μs sine
6 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
VALUES
12
35 to 45
690
0.53
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC
reverse voltage
Maximum working
peak reverse
voltage
SYMBOL
V
R
35
V
RWM
35
40
40
45
45
V
VS-
VS-
VS-
VS-
VS-
VS-
UNITS
12CTQ035PbF 12CTQ035-N3 12CTQ040PbF 12CTQ040-N3 12CTQ045PbF 12CTQ045-N3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current. See fig. 5
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 160 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
6
12
690
140
8
1.20
A
mJ
A
UNITS
A
Maximum peak one cycle non-repetitive
surge current per leg. See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 21-Oct-15
Document Number: 94130
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
6A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
12 A
6A
12 A
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.60
0.73
0.53
0.64
0.8
7.0
0.35
18.23
400
8.0
10 000
mA
V
m
pF
nH
V/µs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
DC operation
See fig. 4
DC operation
R
thCS
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-55 to +175
3.50
1.75
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
R
thJC
Mounting torque
12CTQ035
Marking device
Case style TO-220AB
12CTQ040
12CTQ045
Revision: 21-Oct-15
Document Number: 94130
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
100
T
J
= 175 °C
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (mA)
10
1
0.1
T
J
= 75 °C
0.01
T
J
= 50 °C
0.001
T
J
= 25 °C
0.0001
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 175 °C
10
T
J
= 125 °C
T
J
= 25 °C
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
5
10
15
20
25
30
35
40
45
V
F
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.1
P
DM
t
1
t
2
0.01
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
.
100
0.001
0.00001
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 21-Oct-15
Document Number: 94130
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
5.0
4.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
175
Allowable Case Temperature (°C)
170
Average Power Loss - (W)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
165
DC
160
Square
wave
(D = 0.50)
80
% rated
V
R
applied
155
See note (1)
150
0
2
4
6
8
10
DC
0
2
4
6
8
10
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
Revision: 21-Oct-15
Document Number: 94130
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
12
2
C
3
T
4
Q
5
045 PbF
6
7
1
2
3
4
5
6
7
-
-
-
-
Vishay Semiconductors product
Current rating (12 = 12 A)
Circuit configuration:
C = Common cathode
Package:
T = TO-220
035 = 35 V
040 = 40 V
045 = 45 V
-
-
-
Schottky “Q” series
Voltage ratings
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-12CTQ035PbF
VS-12CTQ035-N3
VS-12CTQ040PbF
VS-12CTQ040-N3
VS-12CTQ045PbF
VS-12CTQ045-N3
QUANTITY PER T/R
50
50
50
50
50
50
MINIMUM ORDER QUANTITY
1000
1000
1000
1000
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-220AB PbF
TO-220AB -N3
www.vishay.com/doc?95222
www.vishay.com/doc?95225
www.vishay.com/doc?95028
www.vishay.com/doc?95629
Revision: 21-Oct-15
Document Number: 94130
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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