VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
Base
cathode
+
2
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according to
JEDEC
®
-JESD 47
2
3
1
TO-263AB (D
2
PAK)
1
Anode -
3
- Anode
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-263AB
(D
2
PAK)
20 A
200 V, 400 V, 600 V
1.3 V
300 A
60 ns
150 °C
Single die
0.6
• Output rectification and
choppers and converters
freewheeling
in
inverters,
on
• Input rectifications where severe
conducted EMI should be met
restrictions
DESCRIPTION
The VS-20ETF..SPbF soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
10 A, T
J
= 25 °C
1 A, 100 A/μs
Range
CHARACTERISTICS
Sinusoidal waveform
VALUES
20
200 to 600
300
1.2
60
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETF02SPbF
VS-20ETF04SPbF
VS-20ETF06SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
5
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 97 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
A
2
s
A
2
s
A
UNITS
Revision: 11-Feb-16
Document Number: 94097
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
TEST CONDITIONS
20 A, T
J
= 25 °C
60 A, T
J
= 25 °C
VALUES
1.30
1.67
12.5
0.9
0.1
5.0
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 20 A
pk
100 A/μs
25 °C
Typical
VALUES
160
10
1.25
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance
junction to ambient (PCB mount)
Soldering temperature
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
T
S
(1)
TEST CONDITIONS
VALUES
-40 to +150
UNITS
°C
DC operation
0.9
°C/W
40
260
2
0.07
20ETF02S
°C
g
oz.
Marking device
Case style TO-263AB (D
2
PAK)
20ETF04S
20ETF06S
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
Revision: 11-Feb-16
Document Number: 94097
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
150
130
Ø
120
110
100
90
30°
80
70
0
2
4
6
8
Conduction angle
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
20ETF.. Series
T
J
= 150 °C
25
30
35
60° 90° 120° 180°
10 12 14 16 18 20 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
300
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
At any rated load condition and with
rated V
RRM
applied following surge.
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
80
0
5
10
30°
60°
Ø
Conduction period
Peak Half Sine Wave
Forward Current (A)
250
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
90°
120°
180°
15
20
25
DC
100
20ETF.. Series
50
30
35
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
550
180°
120°
90°
60°
30°
RMS limit
500
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
30
25
20
15
Peak Half Sine Wave
Forward Current (A)
450
400
350
300
250
200
150
100
20ETF.. Series
0.01
Ø
10
5
0
0
5
10
Conduction angle
20ETF.. Series
T
J
= 150 °C
15
20
25
50
0.001
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 94097
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
1000
4.0
3.5
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
Vishay Semiconductors
Instantaneous Forward Current (A)
Q
rr
- Typical Reverse
Recovery Charge (µC)
3.0
I
FM
= 20 A
2.5
2.0
1.5
1.0
I
FM
= 5 A
0.5
0
I
FM
= 1 A
0
200
400
600
800
1000
I
FM
= 10 A
100
10
T
J
= 25 °C
T
J
= 150 °C
20ETF.. Series
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.20
20ETF.. Series
T
J
= 25 °C
10
9
20ETF.. Series
T
J
= 150 °C
0.15
I
FM
= 30 A
I
FM
= 20 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
8
7
6
5
4
3
2
1
0
I
FM
= 30 A
I
FM
= 20 A
0.10
I
FM
= 10 A
0.05
I
FM
= 5 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
0
200
400
600
800
1000
I
FM
= 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
0.5
20ETF.. Series
T
J
= 150 °C
70
60
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
20
10
I
rr
- Typical Reverse
Recovery Current (A)
t
rr
- Typical Reverse
Recovery Time (µs)
0.4
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
50
40
30
0.3
0.2
0.1
I
FM
= 1 A
0
200
400
600
800
1000
0
0
200
400
600
800
1000
0
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
Revision: 11-Feb-16
Document Number: 94097
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
100
20ETF.. Series
T
J
= 150 °C
Vishay Semiconductors
I
rr
- Typical Reverse
Recovery Current (A)
80
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
60
40
I
FM
= 5 A
I
FM
= 1 A
20
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (K/W)
10
Steady state value
(DC operation)
1
0.1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 94097
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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