BUK6E3R2-55C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 6 September 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
55
120
306
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11
-
2.7
3.2
mΩ
NXP Semiconductors
BUK6E3R2-55C
N-channel TrenchMOS intermediate level FET
Quick reference data
…continued
Parameter
Conditions
Min
-
Typ
-
Max Unit
724
mJ
Table 1.
Symbol
E
DS(AL)S
Avalanche ruggedness
non-repetitive
I
D
= 120 A; V
sup
≤
55 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge I
D
= 25 A; V
DS
= 44 V;
V
GS
= 10 V; see
Figure 13;
see
Figure 14
Dynamic characteristics
Q
GD
-
75
-
nC
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
Drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT226 (I2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK6E3R2-55C
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
Type number
BUK6E3R2-55C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 September 2010
2 of 14
NXP Semiconductors
BUK6E3R2-55C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
E
DS(AL)R
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
I
D
= 120 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[4][5][6]
[3]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Pulsed
DC
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; t
p
≤
10 µs; pulsed;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
[2]
[3]
[3]
Min
-
-20
-16
-
-
-
-
-55
-55
-
-
-
-
Max
55
20
16
120
120
861
306
175
175
120
861
724
-
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
J
Source-drain diode
Avalanche ruggedness
[1]
[2]
[3]
[4]
[5]
[6]
Accumulated pulse duration not to exceed 5mins.
-16V accumulated duration not to exceed 168 hrs.
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
BUK6E3R2-55C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 September 2010
3 of 14
NXP Semiconductors
BUK6E3R2-55C
N-channel TrenchMOS intermediate level FET
250
I
D
(A)
200
003aac795
120
P
der
(%)
80
03na19
150
100
(1)
40
50
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aae197
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
=10
μ
s
100
μ
s
DC
10
1 ms
10 ms
1
100 ms
10
-1
10
-1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6E3R2-55C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 September 2010
4 of 14
NXP Semiconductors
BUK6E3R2-55C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see
Figure 4
vertical in free air
Min
-
-
Typ
-
60
Max
0.45
-
Unit
K/W
K/W
1
Z
th(j-mb)
δ
= 0.5
(K/W)
10
-1
003aac354
0.2
0.1
0.05
0.02
P
δ
=
t
p
T
10
-2
single shot
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
T
t
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6E3R2-55C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 September 2010
5 of 14
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