AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
S
D
G
TO-220AB
AUIRF2804
AUIRF2804
AUIRF2804S
AUIRF2804L
40V
1.5m
2.0m
270A
195A
D
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
Base part number
AUIRF2804
AUIRF2804L
AUIRF2804S
Package Type
TO-220
TO-262
D
2
-Pak
S
G
D
2
Pak
AUIRF2804S
G
S
D
TO-262
AUIRF2804L
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF2804
AUIRF2804L
AUIRF2804S
AUIRF2804STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
270
190
195
1080
300
2.0
± 20
540
1160
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
0.50
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-9-30
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
SMD
R
DS(on)
TO-220
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRF2804/S/L
Min. Typ. Max. Units
Conditions
40
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.031 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
1.5
2.0
V
GS
= 10V, I
D
= 75A
m
–––
1.8
2.3
V
GS
= 10V, I
D
= 75A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
130 ––– –––
S V
DS
= 10V, I
D
= 75A
––– –––
20
V
DS
=40 V, V
GS
= 0V
µA
––– ––– 250
V
DS
=40V,V
GS
= 0V,T
J
=125°C
––– ––– 200
V
GS
= 20V
nA
––– ––– -200
V
GS
= -20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
160
41
66
13
120
130
130
4.5
7.5
6450
1690
840
5350
1520
2210
240
62
99
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 75A
nC
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 75A
ns
R
G
= 2.5
V
GS
= 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 75A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 75A, V
DD
= 20V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
Effective Output Capacitance
C
oss eff.
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Typ. Max. Units
––– 270
–––
–––
56
67
1080
1.3
84
100
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.24mH, R
G
= 25, I
AS
= 75A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
This value determined from sample failure population, starting T
J
= 25°C, L = 0.24mH, R
G
= 25, I
AS
= 75A, V
GS
=10V.
This is applied to D
2
Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
Max R
DS(on)
for D
2
Pak and TO-262 (SMD) devices.
TO-220 device will have an Rth value of 0.45°C/W.
All AC and DC test condition based on old Package limitation current = 75A.
2
2015-9-30
AUIRF2804/S/L
10000
ID, Drain-to-Source Current (A)
1000
ID, Drain-to-Source Current (A)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
100
10
4.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
4.5V
20µs PULSE WIDTH
Tj = 175°C
0.1
1
10
100
1
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
300
G fs , Forward Transconductance ( S)
ID, Drain-to-Source Current
)
250
T J = 175°C
100
T J = 25°C
200
150
T J = 25°C
10
T J = 175°C
100
1
4.0
5.0
6.0
VDS = 10V
20µs PULSE WIDTH
7.0
8.0
9.0
50
0
0
40
80
VDS = 10V
20µs PULSE WIDTH
120
160
200
VGS , Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Transconductance
vs. Drain Current
2015-9-30
3
AUIRF2804/S/L
12000
VGS , Gate-to-Source Voltage (V)
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, Cds SHORTED
gs
Crss = Cgd
Coss = Cds + Cgd
20
ID= 75A
VDS = 32V
VDS= 20V
VDS= 8.0V
16
C, Capacitance (pF)
8000
6000
Ciss
12
4000
8
2000
Coss
Crss
4
0
1
10
100
0
0
40
80
120
160
200
240
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
ISD, Reverse Drain Current (A)
100.0
T J = 175°C
10.0
ID, Drain-to-Source Current (A)
100
10msec
1.0
T J = 25°C
0.1
0.2
0.6
1.0
1.4
VGS = 0V
1.8
2.2
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
VSD, Source-toDrain Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-9-30
AUIRF2804/S/L
300
Limited By Package
250
ID, Drain Current (A)
2.0
R DS(on) , Drain-to-Source On Resistance
ID = 75A
VGS = 10V
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
(Normalized)
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
0.0001
1E-008
1E-007
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-9-30
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
