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NDC7001C
May 2002
NDC7001C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N & P-Channel Enhancement Mode Field
Effect Transistors are produced using Fairchild’s
proprietary, high cell density, DMOS technology. This
very high density process has been designed to
minimize on-state resistance, provide rugged and
reliable performance and fast switching. These
device is particularly suited for low voltage, low
current, switching, and power supply applications.
Features
•
Q1
0.51 A, 60V.
R
DS(ON)
= 2
Ω
@ V
GS
= 10 V
R
DS(ON)
= 4
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 5
Ω
@ V
GS
= –10 V
R
DS(ON)
= 7.5Ω @ V
GS
= –4.5 V
•
Q2
–0.34 A, 60V.
•
High saturation current
•
High density cell design for low R
DS(ON)
•
Proprietary SuperSOT
TM
–6 package: design using copper
lead frame for superior thermal and electrical capabilities
D2
S1
D1
Q2(P)
4
5
G2
3
2
1
Q1(N)
SuperSOT
TM
-6
S2
G1
T
A
=25
o
C unless otherwise noted
6
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Parameter
Q1
60
±20
(Note 1a)
Q2
–60
±20
–0.34
–1
0.96
0.9
0.7
–55 to +150
Units
V
A
0.51
1.5
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
°C/W
Package Marking and Ordering Information
Device Marking
.01C
Device
NDC7001C
Reel Size
7’’
Tape width
8mm
Quantity
3000
2002
Fairchild Semiconductor Corporation
NDC7001C Rev B (W)
NDC7001C
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
I
D
= 250
µA
V
GS
= 0 V,
I
D
= –250
µA
V
GS
= 0 V,
I
D
= 250
µA,Ref.
to 25°C
I
D
= –250
µA,Ref.
to 25°C
V
DS
= 48 V, V
GS
= 0 V
V
DS
= –48 V, V
GS
= 0 V
V
GS
= 20 V,
V
DS
= 0 V
V
GS
= –20 V, V
DS
= 0 V
I
D
= 250
µA
I
D
= –250
µA
Q1
Q2
Q1
Q2
Q1
Q2
All
All
Min
60
–60
Typ
Max Units
V
Off Characteristics
67
–57
1
–1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Q1
Q2
Q1
Q2
Q1
V
DS
= V
GS
,
V
DS
= V
GS
,
1
–1
2.1
–1.9
–3.8
3.2
1
2
1.7
1.2
1.5
1.9
2.5
–3.5
V
mV/°C
I
D
= 250
µA,Referenced.
to 25°C
I
D
= –250
µA,Ref.
to 25°C
V
GS
= 10 V, I
D
= 0.51 A
V
GS
= 4.5 V, I
D
= 0.35 A
V
GS
= 10 V, I
D
= 0.51 A,T
J
=125°C
V
GS
= –10 V, I
D
= –0.34 A
V
GS
= – 4.5 V,I
D
= –0.25 A
V
GS
= –10V,I
D
= –0.34A,T
J
=125°C
V
GS
= 10 V
V
DS
= 10 V
V
DS
= 10 V
I
D
= 0.51 A
1.5
–1
V
GS
= –10 V V
DS
= –10 V
V
DS
= –10 V I
D
= –0.34A
Q2
2
4
3.5
5
7.5
10
Ω
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
Q1
Q2
Q1
Q2
A
380
700
mS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q1
Q2
Q1
Output Capacitance
Q2
Reverse Transfer Capacitance
Q1
Q2
Input Capacitance
Gate Resistance
Q1
Q2
For
Q1:
V
DS
= 25 V,
f = 1.0MHz
For
Q2:
V
DS
= –25 V, V
GS
= 0 V
f = 1.0MHz
V
GS
= 15 mV, f = 1.0 MHz
V
GS
= 0 V
20
66
11
13
4.3
6
11.2
11.2
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
For
Q1:
V
DS
=25 V,
V
GS
= 10 V,
I
DS
= 1 A
R
GEN
= 6
Ω
For
Q2:
V
DS
=–25 V, I
DS
= –1 A
V
GS
= –10 V, R
GEN
= 6
Ω
For
Q1:
V
DS
=25 V,
V
GS
= 10 V,
For
Q2:
V
DS
=–25 V,
V
GS
= –10 V,
I
DS
= 0.51 A
R
GEN
= 6
Ω
I
DS
= –0.35 A
R
GEN
= 6
Ω
2.8
3.2
8
10
14
8
4
1
1.1
1.6
0.2
0.3
0.4
0.3
5.6
6.4
16
20
26
16
8
2
1.5
2.2
ns
ns
ns
ns
nC
nC
nC
NDC7001C Rev B (W)
NDC7001C
Electrical Characteristics
Symbol
I
S
V
SD
t
rr
Q
rr
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Q1
Q2
(Note 2)
(Note 2)
Min
Typ
Max Units
0.51
–0.34
A
V
nS
nC
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
Q1
Q2
Q1
Q2
Q1
Q2
V
GS
= 0 V, I
S
= 0.51 A
V
GS
= 0 V, I
S
= –0.34 A
I
F
= –0.34 A,
I
F
= –0.34 A,
0.8
–0.8
18
16
16
11
1.2
–1.4
I
F
= 0.51 A, d
iF
/d
t
= 100 A/µs
d
iF
/d
t
= 100 A/µs
d
iF
/d
t
= 100 A/µs
I
F
= 0.51 A, d
iF
/d
t
= 100 A/µs
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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