Freescale Semiconductor
Technical Data
Document Number: MRF8P9300H
Rev. 1.1, 7/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
2400 mA, P
out
= 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
19.6
19.6
19.4
η
D
(%)
35.4
35.6
35.8
Output PAR
(dB)
6.0
6.0
5.9
ACPR
(dBc)
--37.3
--37.1
--36.7
MRF8P9300HR6
MRF8P9300HSR6
920-
-960 MHz, 100 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
•
Typical P
out
@ 1 dB Compression Point
≃
326 Watts CW
880 MHz
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
2400 mA, P
out
= 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
865 MHz
880 MHz
895 MHz
G
ps
(dB)
20.5
20.7
20.6
η
D
(%)
35.2
36.0
37.0
Output PAR
(dB)
6.0
6.0
6.0
ACPR
(dBc)
--36.1
--36.1
--35.8
CASE 375D-
-05, STYLE 1
NI-
-1230
MRF8P9300HR6
CASE 375E-
-04, STYLE 1
NI-
-1230S
MRF8P9300HSR6
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
MRF8P9300HR6 MRF8P9300HSR6
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 100 W CW, 28 Vdc, I
DQ
= 2400 mA
Case Temperature 80°C, 300 W CW, 28 Vdc, I
DQ
= 2400 mA
Symbol
R
θJC
Value
(1,2)
0.22
0.20
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(3)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(3)
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ
= 2400 mA, Measured in Functional Test)
Drain--Source On--Voltage
(3)
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.3
0.1
2.3
3.1
0.2
3
3.8
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(4)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2400 mA, P
out
= 100 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
18.0
32.0
5.6
—
—
19.4
35.8
5.9
--36.7
--16
21.0
—
—
--34.0
--10
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2400 mA, P
out
= 100 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
19.6
19.6
19.4
η
D
(%)
35.4
35.6
35.8
Output PAR
(dB)
6.0
6.0
5.9
ACPR
(dBc)
--37.3
--37.1
--36.7
IRL
(dB)
--9
--12
--16
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Part internally matched both on input and output.
(continued)
MRF8P9300HR6 MRF8P9300HSR6
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 310 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 100 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
326
17
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2400 mA, 920--960 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
30
0.16
0.012
0.008
—
—
—
—
MHz
dB
dB/°C
dBm/°C
Typical Broadband Performance — 880 MHz
(In Freescale 880 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2400 mA, P
out
=
100 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
865 MHz
880 MHz
895 MHz
G
ps
(dB)
20.5
20.7
20.6
η
D
(%)
35.2
36.0
37.0
Output PAR
(dB)
6.0
6.0
6.0
ACPR
(dBc)
--36.1
--36.1
--35.8
IRL
(dB)
--11
--14
--16
MRF8P9300HR6 MRF8P9300HSR6
RF Device Data
Freescale Semiconductor
3
B2
V
GS
C43
C17 C15
C21
C51
C19
C13*
C3
C5
C4
C1
C2
C6
C18
C20
C16 C14
C42
C46
C10*
C11*
C7
C12*
C9
CUT OUT AREA
C8
C41
C37
C39
C35
C33
C47
C49
C53
C45
V
DD
C27
C25
C31 C29
C30 C28
C23
C22
C24
C26
C38
C36
C40
C34
C32
C50
C52
C44
V
GS
B1
C48
MRF8P9300H
Rev. 2
V
DD
*C10, C11, C12, and C13 are mounted vertically.
Figure 2. MRF8P9300HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8P9300HR6(HSR6) Test Circuit Component Designations and Values
Part
B1, B2
C1
C2, C3, C16, C17, C26, C27
C4, C5, C28, C29, C32, C33, C34, C35
C6, C7
C8, C9
C10, C11, C12, C13
C14, C15, C42, C43
C18, C19
C20, C21
C22, C23
C24, C25
C30, C31
C36, C37
C38, C39
C40, C41
C44, C45
C46, C47
C48, C49, C50, C51
C52, C53
PCB
Description
Short RF Bead
0.2 pF Chip Capacitor
39 pF Chip Capacitors
1.1 pF Chip Capacitors
2.7 pF Chip Capacitors
5.1 pF Chip Capacitors
3.0 pF Chip Capacitors
10 pF Chip Capacitors
2.2
μF,
50 V Chip Capacitors
47
μF,
50 V Electrolytic Capacitors
1.0 pF Chip Capacitors
0.5 pF Chip Capacitors
0.8 pF Chip Capacitors
4.7 pF Chip Capacitors
4.3 pF Chip Capacitors
11 pF Chip Capacitors
20 pF Chip Capacitors
30 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
0.030″,
ε
r
= 3.50
Part Number
2743019447
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RF--35
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Fair--Rite
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ATC
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MRF8P9300HR6 MRF8P9300HSR6
4
RF Device Data
Freescale Semiconductor
Devices are tested in a
parallel configuration
Single--ended
λ
λ
4
4
Quadrature combined
λ
4
Doherty
λ
2
λ
2
Push--pull
Figure 3.
Possible Circuit Topologies
MRF8P9300HR6 MRF8P9300HSR6
RF Device Data
Freescale Semiconductor
5
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