BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
●
●
●
●
Designed for Complementary Use with
BDV64, BDV64A, BDV64B and BDV64C
125 W at 25°C Case Temperature
12 A Continuous Collector Current
Minimum h
FE
of 1000 at 4 V, 5 A
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
This model is currently available, but not
recommended for new designs. For more
information, see
http://bourns.com/data/
global/pdfs/TSP1203_SOT93_POM.pdf.
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDV65
Collector-base voltage (I
E
= 0)
BDV65A
BDV65B
BDV65C
BDV65
Collector-emitter voltage (I
B
= 0)
BDV65A
BDV65B
BDV65C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for t
p
≤
0.1 ms, duty cycle
≤
10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
60
80
100
120
60
80
100
120
5
12
15
0.5
125
3.5
-65 to +150
-65 to +150
260
V
A
A
A
W
W
°C
°C
°C
V
V
UNIT
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BDV65
V
(BR)CEO
I
C
= 30 mA
I
B
= 0
(see Note 4)
BDV65A
BDV65B
BDV65C
V
CB
= 30 V
I
CEO
Collector-emitter
cut-off current
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
CBO
Collector cut-off
current
V
CB
= 120 V
V
CB
= 30 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
I
EBO
h
FE
V
CE(sat)
V
BE
V
EC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
I
B
=
V
CE
=
I
E
=
5V
4V
20 mA
4V
10 A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= 5 A
I
C
= 5 A
I
C
= 5 A
I
B
= 0
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
1000
2
2.5
3.5
V
V
V
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
MIN
60
80
100
120
2
2
2
2
0.4
0.4
0.4
0.4
2
2
2
2
5
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1
35.7
UNIT
°C/W
°C/W
2
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
70000
TCS140AD
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
1·5
TCS140AE
h
FE
- Typical DC Current Gain
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
10000
1·0
1000
0·5
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
0
0·5
1·0
I
C
- Collector Current - A
10
20
V
CE
= 4 V
t
p
= 300 µs, duty cycle < 2%
100
0·5
1·0
I
C
- Collector Current - A
10
20
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
2·5 T
C
= 100°C
TCS140AF
2·0
1·5
1·0
0·5
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
1·0
I
C
- Collector Current - A
10
20
0
0·5
Figure 3.
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
140
P
tot
- Maximum Power Dissipation - W
TIS140AA
120
100
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 4.
4
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
