d. Maximum under steady state conditions is 120 °C/W.
Document Number: 73698
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
1
b, d
t
≤
10 s
Steady-State
Symbol
R
thJA
R
thJF
Typ.
57
35
Max.
67.5
45
Unit
°C/W
Si4908DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1.5 A
0.8
26
26
13
13
T
C
= 25 °C
2.3
20
1.2
40
40
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
=4
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
DD
= 20 V, R
L
= 4
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 5 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 20 V, V
GS
= 0 V, I
D
= 1 MHz
355
50
29
8
3.7
1.1
1.4
3.4
8
20
23
27
74
95
31
33
5.2
13
30
35
42
110
145
48
50
ns
Ω
12
6
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4.1 A
V
GS
= 4.5 V, I
D
= 3.8 A
V
DS
= 15 V, I
D
= 4.1 A
20
0.048
0.056
15
0.060
0.070
0.8
40
40
- 4.6
2.2
100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73698
S09-0540-Rev. B, 06-Apr-09
Si4908DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 10
V
thru 4
V
I
D
– Drain Current (A)
I
D
– Drain Current (A)
16
1.2
1.0
0.8
12
3
V
8
0.6
T
C
= 125 C
0.4
25 C
- 55 C
4
0.2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source
Voltage
(V)
V
GS
– Gate-to-Source
Voltage
(V)
Output Characteristics
0.08
550
500
R
DS(on)
– On-Resistance (m )
0.07
C – Capacitance (pF)
450
400
350
300
250
200
150
0.04
100
50
0.03
0
4
8
12
16
20
0
0
8
Transfer Characteristics
C
iss
0.06
V
GS
= 4.5
V
V
GS
= 10
V
0.05
C
rss
C
oss
16
24
32
40
I
D
– Drain Current (A)
V
DS
– Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
GS
– Gate-to-Source
Voltage
(V)
I
D
= 5 A
8
V
DS
= 10
V
R
DS(on)
– On-Resistance
1.8
2.1
I
D
= 5 A
Capacitance
V
GS
= 4.5
V
(Normalized)
1.5
V
GS
= 10
V
1.2
6
V
DS
= 20
V
V
DS
= 30
V
4
2
0.9
0
0.0
2.5
5.0
7.5
10.0
12.5
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature ( C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73698
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
3
Si4908DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
10
R
DS(on)
– Drain-to-Source On-Resistance ( )
0.25
I
D
= 5 A
0.20
I
S
– Source Current (A)
1
T
J
= 150 C
0.15
T
J
= 25 C
0.1
0.10
T
A
= 125 C
0.05
T
A
= 25 C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain
Voltage
(V)
0.00
2
3
4
5
6
7
8
9
10
V
GS
– Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
50
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance
(V)
40
0.0
Power (W)
I
D
= 5 mA
- 0.2
30
20
- 0.4
I
D
= 250
µA
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
– Temperature ( C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
Single Pulse Power, Junction-to-Ambient
I
D
– Drain Current (A)
1
1 ms
10 ms
100 ms
0.1
T
A
= 25 C
Single Pulse
1s
10 s
DC
10
100
0.01
0.1
*
V
GS
1
V
DS
– Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73698
S09-0540-Rev. B, 06-Apr-09
Si4908DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
6
5
I
D
– Drain Current (A)
4
3
2
1
0
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
Current Derating*
3.5
3.0
1.00
Power Dissipation (W)
Power Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
0.00
0
25
50
75
100
125
150
1.25
0.75
0.50
0.25
T
C
– Case Temperature (°C)
T
A
– Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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