BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
●
●
●
●
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
1
2
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD241D
Collector-emitter voltage (R
BE
= 100
Ω)
BD241E
BD241F
BD241D
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
BD241E
BD241F
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
T
j
T
stg
T
L
2
SYMBOL
V
CER
VALUE
160
180
200
120
UNIT
V
V
CEO
140
160
5
3
5
1
40
2
32
-65 to +150
-65 to +150
250
V
V
A
A
A
W
W
mJ
°C
°C
°C
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
SEPTEMBER 1981 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V
(BR)CEO
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
I
C
= 30 mA
(see Note 5)
V
CE
= 160 V
V
CE
= 180 V
V
CE
= 200 V
V
CE
= 90 V
V
EB
=
V
CE
=
V
CE
=
5V
4V
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
1A
3A
3A
3A
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
20
3
25
5
2.5
1.8
V
V
TEST CONDITIONS
BD241D
I
B
= 0
BD241E
BD241F
BD241D
BD241E
BD241F
MIN
120
140
160
0.2
0.2
0.2
0.3
1
mA
mA
mA
V
TYP
MAX
UNIT
I
CES
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE
h
fe
I
B
= 750 mA
V
CE
=
4V
V
CE
= 10 V
V
CE
= 10 V
I
C
= 0.5 A
I
C
= 0.5 A
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
3.125
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 1 A
V
BE(off)
= -3.7 V
I
B(on)
= 0.1 A
R
L
= 20
Ω
†
MIN
I
B(off)
= -0.1 A
t
p
= 20 µs, dc
≤
2%
TYP
0.3
1
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
SEPTEMBER 1981 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= 4 V
t
p
= 300 µs, duty cycle < 2%
TCS631AH
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
10
TCS631AB
T
C
= 25°C
T
C
= 80°C
h
FE
- DC Current Gain
1·0
100
0·1
I
C
=
I
C
=
I
C
=
I
C
=
0·01
0·1
100 mA
300 mA
1A
3A
1·0
10
100
1000
10
0·01
0·1
1·0
10
I
C
- Collector Current - A
I
B
- Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·0
V
CE
= 4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
0·9
TCS631AC
0·8
0·7
0·6
0·5
0·01
0·1
1·0
10
I
C
- Collector Current - A
Figure 3.
SEPTEMBER 1981 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS631AH
I
C
- Collector Current - A
10
t
p
= 300 µs, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
1·0
0·1
BD241D
BD241E
BD241F
10
100
1000
0·01
1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
50
P
tot
- Maximum Power Dissipation - W
TIS631AA
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
4
SEPTEMBER 1981 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,90
14,55
1,32
1,23
see Note B
see Note C
6,1
3,5
0,97
0,61
1
2
3
1,70
1,07
14,1
12,7
2,74
2,34
5,28
4,88
2,90
2,40
0,64
0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
SEPTEMBER 1981 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
