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IXFQ50N60P3: 产品描述MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET; 产品类别半导体分立半导体; 文件大小141KB，共5页; 制造商IXYS ( Littelfuse ); 官网地址http://www.ixys.com/

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MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	IXYS ( Littelfuse )
产品种类 Product Category	MOSFET
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	TO-3P-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	145 mOhms
Vgs th - Gate-Source Threshold Voltage	5 V
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	94 nC
Configuration	Single
Pd-功率耗散 Pd - Power Dissipation	1040 W
系列 Packaging	Tube
Transistor Type	1 N-Channel
Forward Transconductance - Min	55 S, 32 S
Fall Time	17 ns
NumOfPackaging	1
Rise Time	20 ns
工厂包装数量 Factory Pack Quantity	30
单位重量 Unit Weight	0.056438 oz

	IXFQ50N60P3	IXFT50N60P3
描述	MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET	MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET
Product Attribute	Attribute Value	Attribute Value
制造商 Manufacturer	IXYS ( Littelfuse )	IXYS ( Littelfuse )
产品种类 Product Category	MOSFET	MOSFET
RoHS	Details	Details
技术 Technology	Si	Si
安装风格 Mounting Style	Through Hole	SMD/SMT
封装 / 箱体 Package / Case	TO-3P-3	TO-268-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V	600 V
Id - Continuous Drain Current	50 A	50 A
Rds On - Drain-Source Resistance	145 mOhms	145 mOhms
Vgs th - Gate-Source Threshold Voltage	5 V	5 V
Vgs - Gate-Source Voltage	30 V	30 V
Qg - Gate Charge	94 nC	94 nC
Configuration	Single	Single
Pd-功率耗散 Pd - Power Dissipation	1040 W	1040 W
系列 Packaging	Tube	Tube
Transistor Type	1 N-Channel	1 N-Channel
Forward Transconductance - Min	55 S, 32 S	55 S, 32 S
Fall Time	17 ns	17 ns
Rise Time	20 ns	20 ns
工厂包装数量 Factory Pack Quantity	30	30
单位重量 Unit Weight	0.056438 oz	0.229281 oz

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