formation of silicon vias by imbedding them in low
loss, low dispersion glass along with high Q spiral
inductors and MIM capacitors. The close proximity of
elements and the combination of silicon and glass
give this HMIC device low loss and high
performance with exceptional repeatability through
millimeter frequencies.
Large vias reduce inductance and allow part to be
more easily soldered, while the gold backside
metallization provides the RF and DC ground. This
allows for manual or automatic die attach via
electrically conductive silver epoxy or RoHS
compliant solders.
The MABT-011000 bias network is suitable for the
DC biasing of PIN diode control circuits. It functions
as an RF-DC de-coupling network as well as the DC
return and contains a series DC blocking capacitor.
DC currents up to 60 mA and DC voltages up to
50 V may be used.
J1 (IN)
J2 (OUT)
Pin Configuration
Pin
J1
J2
B
Function
RF Input
RF Output
DC Bias
Ordering Information
1
Part Number
MABT-011000-14230G
MABT-011000-14230W
MABT-011000-14230P
MABT-011000-14235P
1. Die quantity varies.
Package
Gel pack
Wafer Frame
3000 piece reel
500 piece reel
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABT-011000
Integrated Bias Network
2 - 18 GHz
Electrical Specifications: T
A
= 25°C
Parameter
Test Conditions
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
Units
Min.
Typ.
0.25
0.10
0.15
0.25
34
60
60
47
23
35
34
26
22
44
37
26
Max.
0.50
0.30
0.40
0.50
—
Rev. V1
Insertion Loss (J1-J2)
dB
—
30
50
50
40
17
17
17
17
17
17
17
17
RF - DC Isolation (J1-B, J2-B)
dB
Input Return Loss (J1)
dB
—
Output Return Loss (J2)
dB
—
Absolute Maximum Ratings
2,3
Parameter
DC Bias Voltage
DC Bias Current
Operating Temperature
Storage Temperature
Absolute Maximum
±50 V
±60 mA
-65°C to +125°C
-65°C to +150°C
Maximum RF Input De-Rating Curve
4
37.5
37.0
36.5
36.0
35.5
35.0
34.5
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near these
survivability limits.
25
35
45
55
65
75
85
Back Surface Temperature (°C)
Handling Procedures
Please observe the following precautions to avoid
damage:
4. Based on testing done at 2.2 GHz.
Static Sensitivity
Integrated Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM class 1B
devices.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABT-011000
Integrated Bias Network
2 - 18 GHz
Typical RF Performance
Insertion Loss
0.0
Rev. V1
Isolation (RF to DC)
0
-0.2
-20
-0.4
-40
-0.6
-60
-0.8
0
5
10
15
20
-80
0
5
10
15
20
Frequency (GHz)
Frequency (GHz)
Input Return Loss
0
Output Return Loss
0
-10
-10
-20
-20
-30
-30
-40
-40
-50
0
5
10
15
20
-50
0
5
10
15
20
Frequency (GHz)
Frequency (GHz)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABT-011000
Integrated Bias Network
2 - 18 GHz
Operation
Operation of the MABT-011000 bias network is
accomplished by applying DC bias to the DC port on
the die. Port J2 provides the DC bias to the
corresponding, connected, microwave device. Port
J1 has a DC blocking capacitor, allowing current to
only RF port J2, such as in a bias tee configuration.
The MABT-011000 can also be used as a ground
return when the DC Bias Port is attached to the RF
and DC ground. The small DC resistance (≈ 7 Ω) of
the DC Bias Port allows up to +/- 60 mA @ +/- 50 V
to be delivered while still maintaining >35 dB
RF-to-DC isolation.
Rev. V1
Bias Circuit for PIN Diode Switch
J2
IN
External
DC Block
PIN
Diodes
DC Bias
J1
OUT
Shunt Exclusive
DC Bias
Handling Procedures
A vacuum pick up tool with a soft tip is
recommended while placing the die. Attachment to a
circuit board is made simple through the use of
standard surface mount technology. Mounting pads
are located on the back surface of the die. Position
the die so that its mounting pads are aligned with the
circuit board land pads. Since the HMIC glass is
transparent, the edges of the mounting pads can be
visually inspected through the die after attachment is
completed.
Connections may be made onto hard or soft
substrates using 80Au20Sn or other solder. When
soldering these devices to a hard substrate, a solder
re-flow method is preferred. When soldering to soft
substrates, such as Duroid, it is recommended to
choose a solder that minimizes stress due to any
TCE mismatches.
Typical re-flow profiles are provided in Application
Note M538, Surface Mounting Instructions,
available in the Technical Resources section of the
MACOM website at www.macom.com. Solder
reflow should not be performed by causing heat to
flow through the top surface of the die to the back
surface of the die.
For applications where the average power is ≤ 1 W,
a thermally-conductive silver epoxy may be used.
Cure per manufacturers recommended time and
temperature, typically 1 hour at 150°C.
J1
IN
J2
PIN
Diodes
J2
J1
OUT
DC Bias
Series Exclusive
DC Bias
J1
IN
J2
J2
J1
OUT
PIN
Diodes
DC Bias
Series - Shunt Exclusive
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MABT-011000
Integrated Bias Network
2 - 18 GHz
Die Outline Drawing
Rev. V1
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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