NRVTSA3100E,
NRVTSAF3100E
Low Forward Voltage, Low
Leakage Trench-based
Schottky Rectifier
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Features
•
Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
SCHOTTKY BARRIER
RECTIFIERS
3 AMPERES
100 VOLTS
MARKING
DIAGRAMS
SMA
CASE 403D
STYLE 1
TE31
AYWWG
Typical Applications
•
Switching Power Supplies including Wireless, Smartphone and
•
•
•
•
•
•
•
•
•
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
LED Lighting
SMA−FL
CASE 403AA
STYLE 6
AYWW
E31G
G
Mechanical Characteristics:
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
•
Device Meets MSL 1 Requirements
ORDERING INFORMATION
Device
NRVTSA3100ET3G
NRVTSAF3100ET3G
Package
SMA
(Pb−Free)
SMA−FL
(Pb−Free)
Shipping†
5000 /
Tape & Reel
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
February, 2015 − Rev. 1
Publication Order Number:
NRVTSA3100E/D
NRVTSA3100E, NRVTSAF3100E
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T
L
= 134°C)
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, T
L
= 127°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
J
Value
Unit
V
100
3.0
6.0
50
−65 to +175
−55 to +175
1A
M3
A
A
A
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Steady State (Note 1)
NRVTSA3100E
NRVTSAF3100E
Junction−to−Lead
Junction−to−Ambient
Junction−to−Lead
Junction−to−Ambient
Symbol
R
θJL
R
θJA
R
θJL
R
θJA
Typ
−
−
−
−
Max
22
80
23.8
82
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 Amps, T
J
= 25°C)
(i
F
= 3.0 Amps, T
J
= 25°C)
(i
F
= 1.0 Amps, T
J
= 125°C)
(i
F
= 3.0 Amps, T
J
= 125°C)
Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
Diode Capacitance
(Rated dc Voltage, T
J
= 25°C, f = 1 MHz)
i
R
0.90
0.62
C
d
14.3
5.0
2.0
v
F
0.61
0.88
0.53
0.66
−
0.995
−
0.70
mA
mA
pF
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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2
NRVTSA3100E, NRVTSAF3100E
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
100
T
A
= 175°C
10
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
10
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
1
1
0.1
0.2
T
A
= −55°C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
0.2
T
A
= −55°C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
T
A
= 25°C
20
30
40
50
60
70
80
90
100
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
10
T
A
= 25°C
1.E−08
10
20
30
40
50
60
70
80
90
100
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
5
Figure 4. Maximum Reverse Characteristics
DC
4
R
qJL
= 22°C/W
3
Square Wave
100
2
1
0
0 10
30
50
70
90
110
130
150
170
T
C
, CASE TEMPERATURE (°C)
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating for NRVTSA3100E
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3
NRVTSA3100E, NRVTSAF3100E
TYPICAL CHARACTERISTICS
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
P
F(AV)
, AVERAGE FORWARD POWER
DISSIPATION (W)
5
DC
4
R
qJL
= 22°C/W
6
I
PK
/I
AV
= 20
5
4
3
Square Wave
2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
DC
I
PK
/I
AV
= 10
I
PK
/I
AV
= 5
3
Square Wave
2
1
0
0 10
30
50
70
90
110
130
150
170
T
C
, CASE TEMPERATURE (°C)
Figure 7. Current Derating for NRVTSAF3100E
Figure 8. Forward Power Dissipation
R
(t)
, TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
100
50% Duty Cycle
20%
10
10%
5%
2%
1
1%
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (S)
Figure 9. Typical Transient Thermal Response, Junction−to−Ambient for NRVTSA3100E
R
(t)
, TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
100
50% Duty Cycle
20%
10
10%
5%
2%
1
1%
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (S)
Figure 10. Typical Transient Thermal Response, Junction−to−Ambient for NRVTSAF3100E
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4
NRVTSA3100E, NRVTSAF3100E
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE G
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
DIM
A
A1
b
c
D
E
H
E
L
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
A
L
c
A1
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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