Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature ...........................................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(V
IN
= 14V; C
GATE
= 6000pF, C
REG
= 4.7µF, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= T
J
= +25°C.)
(Note 1)
PARAMETER
Supply Voltage Range
SYMBOL
V
IN
SHDN
= high, no load (MAX6397)
Input Supply Current
SHDN
= high, (MAX6398)
SHDN
= low, no load (MAX6397)
SHDN
= low, (MAX6398)
IN Undervoltage Lockout
IN Undervoltage-Lockout
Hysteresis
SET Threshold Voltage
SET Threshold Hysteresis
SET Input Current
Startup Response Time
GATE Rise Time
SET-to-GATE Propagation
Delay
GATE Output High Voltage
GATE Output Low Voltage
GATE Charge-Pump Current
GATE-to-OUT Clamp Voltage
SHDN
Logic-High Input Voltage
SHDN
Logic-Low Input Voltage
SHDN
Input Pulldown Current
Thermal Shutdown (Note 3)
Thermal-Shutdown Hysteresis
REGULATOR (MAX6397)
Ground Current
I
GND
SHDN
= GND
I
REG
= 1mA
40
60
48
I
REG
= 100mA
µA
t
OV
V
TH
V
HYST
I
SET
t
START
SHDN
rising (Note 2)
GATE rising from GND to V
OUT
+ 8V,
C
GATE
= 6000pF, OUT = GND
SET rising from V
TH
- 100mV to V
TH
+ 100mV
V
OUT
= V
IN
= 6V, R
GATE
to IN = 1MΩ
V
OUT
= V
IN
; V
IN
≥ 14V, R
GATE
to IN = 1MΩ
GATE sinking 20mA, V
OUT
= GND
GATE = GND
13
1.4
0.4
V
SHDN
= 2V,
SHDN
is internally pulled
down to GND
1
+150
20
µA
°C
°C
V
IN
+
3.8V
V
IN
+
8.5V
V
IN
+
4.2V
V
IN
+
9.2V
75
18
V
IN
rising, enables GATE
V
IN
falling, disables GATE
With respect to GND
1.181
-50
100
1
0.75
V
IN
+
4.6V
V
IN
+
11.5V
0.38
4.66
CONDITIONS
MIN
5.5
118
104
37
11
5
175
1.215
4
+50
1.248
TYP
MAX
72
140
130
45
20
5.50
V
mV
V
%
nA
µs
ms
µs
µA
UNITS
V
V
OH
V
OL
V
V
µA
V
V
CLMP
V
IH
V
IL
I
GATE
www.maximintegrated.com
Maxim Integrated
│
2
MAX6397/MAX6398
Overvoltage Protection Switch/Limiter
Controllers Operate Up to 72V
Electrical Characteristics (continued)
(V
IN
= 14V; C
GATE
= 6000pF, C
REG
= 4.7µF, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= T
J
= +25°C.)
(Note 1)
PARAMETER
SYMBOL
MAX6397L/M
MAX6397S/T
V
REG
MAX6397Y/Z
MAX6397V/W
Dropout Voltage (Note 4)
Current Limit
Overvoltage-Protection
Threshold
Overvoltage-Protection Sink
Current
Line Regulation (Note 5)
V
OVP
I
OVP
∆V
REG
/
∆V
REG
V
REG
= 1.1 x V
REG
(Nominal)
6.5V ≤ V
IN
≤ 72V, I
REG
= 10mA, V
REG
= 5V
5.5V ≤ V
IN
≤ 72V, I
REG
= 1mA, V
REG
= 5V
5.5V ≤ V
IN
≤ 72V, I
REG
= 100mA, V
REG
= 5V
1.5
0.8
55
180
4.500
4.230
2.966
2.805
2.250
2.125
1.590
1.524
4.67
4.375
3.053
2.892
2.304
2.188
1.653
1.575
35
100
0.3
4.780
4.500
3.140
2.970
2.375
2.250
1.696
1.625
µs
nA
V
V
mV/mA
dB
µs
∆V
DO
CONDITIONS
I
REG
= 1mA
1mA < I
REG
< 100mA
I
REG
= 1mA
1mA < I
REG
< 100mA
I
REG
= 1mA
1mA < I
REG
< 100mA
I
REG
= 1mA
1mA < I
REG
< 100mA
MIN
4.925
4.85
3.243
3.201
2.246
2.41
1.76
1.715
1.8
2.5
3.3
TYP
5
MAX
5.120
5.15
3.36
3. 36
2.542
2.55
1.837
1.837
0.12
1.2
150
105
15
0.22
0.05
mV/mA
300
mA
% of
V
REG
mA
mV/V
V
UNITS
REG Output Voltage
(V
IN
≥ V
REG
+ 1.8V)
5.5V ≤ V
IN
≤ 72V, I
REG
= 1mA, V
REG
= 5V
5.5V ≤ V
IN
≤ 72V, I
REG
= 100mA, V
REG
= 5V
V
IN
= 14V
Load Regulation
Power-Supply Rejection Ratio
Startup Response Time
∆VREG /
1mA ≤ I
REG
≤ 100mA,
V
REG
= 5V
∆IREG
I
REG
= 10mA, f = 100Hz, 0.5V
P-P
t
START
R
REG
= 500Ω, V
REG
= 5V, C
REG
= 4.7µF
L
M
T
POK Assertion Threshold
(MAX6397 Only)
V
POK_TH
S
Z
Y
W
V
REG-to-POK Delay
POK Leakage Current
POK Output Low Voltage
V
OL
V
REG
rising or falling
V
POK
= 5V
V
IN
≥ 1.5V, I
SINK
= 1.6mA, POK asserted
Note 1:
Specifications to T
A
= -40°C are guaranteed by design and not production tested.
Note 2:
The MAX6397/MAX6398 power up with the external FET in off mode (V
GATE
= GND). The external FET turns on t
START
after the device is powered up and all input conditions are valid.
Note 3:
For accurate overtemperature-shutdown performance, place the device in close thermal contact with the external MOSFET.
Note 4:
Dropout voltage is defined as V
IN
- V
REG
when V
REG
is 2% below the value of V
REG
for V
IN
= V
REG
(nominal) + 2V.
Note 5:
Operations beyond the thermal dissipation limit may permanently damage the device.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
