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CY7C1614KV18-333BZC

产品描述SRAM 144Mb 1.8V 333Mhz 4M x 36 QDR II SRAM
产品类别存储    存储   
文件大小586KB,共33页
制造商Cypress(赛普拉斯)
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CY7C1614KV18-333BZC概述

SRAM 144Mb 1.8V 333Mhz 4M x 36 QDR II SRAM

CY7C1614KV18-333BZC规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Cypress(赛普拉斯)
零件包装代码BGA
包装说明LBGA, BGA165,11X15,40
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Factory Lead Time1 week
Is SamacsysN
最长访问时间0.45 ns
其他特性PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)333 MHz
I/O 类型SEPARATE
JESD-30 代码R-PBGA-B165
JESD-609代码e0
长度17 mm
内存密度150994944 bit
内存集成电路类型QDR SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量165
字数4194304 words
字数代码4000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织4MX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)220
电源1.5/1.8,1.8 V
认证状态Not Qualified
座面最大高度1.4 mm
最大待机电流0.41 A
最小待机电流1.7 V
最大压摆率1.16 mA
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead/Silver (Sn/Pb/Ag)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度15 mm
Base Number Matches1

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CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
144-Mbit QDR
®
II SRAM Two-Word
Burst Architecture
144-Mbit QDR
®
II SRAM Two-Word Burst Architecture
Features
Configurations
CY7C1625KV18 – 16M × 9
CY7C1612KV18 – 8M × 18
CY7C1614KV18 – 4M × 36
Separate independent read and write data ports
Supports concurrent transactions
360-MHz clock for high bandwidth
Two-word burst on all accesses
Double data rate (DDR) interfaces on both read and write ports
(data transferred at 720 MHz) at 360 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Single multiplexed address input bus latches address inputs
for both read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
Quad data rate (QDR
®
) II operates with 1.5-cycle read latency
when DOFF is asserted high
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted low
Available in × 9, × 18, and × 36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 V (± 0.1 V); I/O V
DDQ
= 1.4 V to V
DD
Supports both 1.5 V and 1.8 V I/O supply
Available in 165-ball fine-pitch ball grid array (FBGA) package
(15 × 17 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive high-speed transceiver logic (HSTL) output
buffers
JTAG 1149.1 compatible test access port
Phase Locked Loop (PLL) for accurate data placement
Functional Description
The CY7C1625KV18, CY7C1612KV18, and CY7C1614KV18
are 1.8 V synchronous pipelined SRAMs, equipped with QDR II
architecture. QDR II architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II architecture has separate data inputs and
data outputs to completely eliminate the need to ‘turn around’ the
data bus that exists with common I/O devices. Access to each
port is through a common address bus. Addresses for read and
write addresses are latched on alternate rising edges of the input
(K) clock. Accesses to the QDR II read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with two 9-bit
words (CY7C1625KV18), 18-bit words (CY7C1612KV18), or
36-bit words (CY7C1614KV18) that burst sequentially into or out
of the device. Because data can be transferred into and out of
the device on every rising edge of both input clocks (K and K and
C and C), memory bandwidth is maximized while simplifying
system design by eliminating bus turnarounds.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
For a complete list of related documentation, click
here.
Selection Guide
Description
Maximum operating frequency
Maximum operating current
× 18
360 MHz
360
× 9 Not Offered
1025
× 36 Not Offered
333 MHz
333
950
970
1160
300 MHz
300
880
910
1080
250 MHz
250
780
800
950
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-16238 Rev. *O
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 12, 2018

CY7C1614KV18-333BZC相似产品对比

CY7C1614KV18-333BZC CY7C1612KV18-300BZC CY7C1625KV18-250BZXI CY7C1614KV18-300BZC CY7C1614KV18-250BZI CY7C1612KV18-250BZXI CY7C1625KV18-300BZXC
描述 SRAM 144Mb 1.8V 333Mhz 4M x 36 QDR II SRAM SRAM 144Mb (8Mx18) QDR II QDR II + SRAM SRAM 144MB (16Mx9) QDR II 1.8V, 250MHz SRAM 144Mb 1.8V 300Mhz 4M x 36 QDR II SRAM SRAM 144Mb 1.8V 250Mhz 4M x 36 QDR II SRAM SRAM 144Mb 1.8V 250Mhz 8M x 18 QDR II SRAM SRAM 144MB (16Mx9) QDR II 1.8V, 300MHz
是否Rohs认证 不符合 不符合 符合 不符合 不符合 符合 符合
零件包装代码 BGA BGA BGA BGA BGA BGA BGA
包装说明 LBGA, BGA165,11X15,40 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 LBGA, BGA165,11X15,40 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 LBGA, BGA165,11X15,40 LBGA, BGA165,11X15,40 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
针数 165 165 165 165 165 165 165
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns
其他特性 PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
JESD-30 代码 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165
JESD-609代码 e0 e0 e1 e0 e0 e1 e1
长度 17 mm 17 mm 17 mm 17 mm 17 mm 17 mm 17 mm
内存密度 150994944 bit 150994944 bit 150994944 bit 150994944 bit 150994944 bit 150994944 bit 150994944 bit
内存集成电路类型 QDR SRAM QDR SRAM QDR SRAM QDR SRAM QDR SRAM QDR SRAM QDR SRAM
内存宽度 36 18 9 36 36 18 9
功能数量 1 1 1 1 1 1 1
端子数量 165 165 165 165 165 165 165
字数 4194304 words 8388608 words 16777216 words 4194304 words 4194304 words 8388608 words 16777216 words
字数代码 4000000 8000000 16000000 4000000 4000000 8000000 16000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 85 °C 70 °C 85 °C 85 °C 70 °C
组织 4MX36 8MX18 16MX9 4MX36 4MX36 8MX18 16MX9
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LBGA LBGA LBGA LBGA LBGA LBGA LBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 220 220 260 220 220 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm
最大供电电压 (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
最小供电电压 (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
标称供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
表面贴装 YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL
端子面层 Tin/Lead/Silver (Sn/Pb/Ag) Tin/Lead/Silver (Sn/Pb/Ag) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead/Silver (Sn/Pb/Ag) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
端子形式 BALL BALL BALL BALL BALL BALL BALL
端子节距 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 30 30 40 30 NOT SPECIFIED 40 40
宽度 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm
厂商名称 Cypress(赛普拉斯) Cypress(赛普拉斯) - Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯)
Factory Lead Time 1 week - 1 week 1 week 1 week - -
最大时钟频率 (fCLK) 333 MHz - 250 MHz - 250 MHz 250 MHz -
I/O 类型 SEPARATE - SEPARATE - SEPARATE SEPARATE -
湿度敏感等级 3 3 - 3 3 - -
输出特性 3-STATE - 3-STATE - 3-STATE 3-STATE -
封装等效代码 BGA165,11X15,40 - BGA165,11X15,40 - BGA165,11X15,40 BGA165,11X15,40 -
电源 1.5/1.8,1.8 V - 1.5/1.8,1.8 V - 1.5/1.8,1.8 V 1.5/1.8,1.8 V -
最大待机电流 0.41 A - 0.37 A - 0.37 A 0.37 A -
最小待机电流 1.7 V - 1.7 V - 1.7 V 1.7 V -
最大压摆率 1.16 mA - 0.78 mA - 0.95 mA 0.8 mA -

 
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