Freescale Semiconductor
Technical Data
Document Number: MRF8S26120H
Rev. 0, 6/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ
= 900 mA, P
out
= 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
2620 MHz
2655 MHz
2690 MHz
G
ps
(dB)
15.5
15.5
15.6
η
D
(%)
31.5
31.1
31.1
Output PAR
(dB)
6.3
6.3
6.2
ACPR
(dBc)
--38.0
--37.3
--36.7
MRF8S26120HR3
MRF8S26120HSR3
2620-
-2690 MHz, 28 W AVG., 28 V
W-
-CDMA, LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 135 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
110 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
CASE 465-
-06, STYLE 1
NI-
-780
MRF8S26120HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF8S26120HSR3
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
141
0.78
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 72°C, 28 W CW, 28 Vdc, I
DQ
= 900 mA, 2690 MHz
Case Temperature 85°C, 110 W CW
(4)
, 28 Vdc, I
DQ
= 900 mA, 2690 MHz
Symbol
R
θJC
Value
(2,3)
0.53
0.47
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8S26120HR3 MRF8S26120HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 172
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 900 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.7 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
1.5
0.1
2.0
2.6
0.24
2.7
3.0
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 900 mA, P
out
= 28 W Avg., f = 2690 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
14.5
28.0
5.7
—
—
15.6
31.1
6.2
--36.7
--14
17.5
—
—
--34.5
--9
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 900 mA, P
out
= 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
2620 MHz
2655 MHz
2690 MHz
1. Part internally matched both on input and output.
G
ps
(dB)
15.5
15.5
15.6
η
D
(%)
31.5
31.1
31.1
Output PAR
(dB)
6.3
6.3
6.2
ACPR
(dBc)
--38.0
--37.3
--36.7
IRL
(dB)
--13
--14
--14
(continued)
MRF8S26120HR3 MRF8S26120HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 80 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 70 MHz Bandwidth @ P
out
= 28 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
(1)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
110
18
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 900 mA, 2620--2690 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
65
0.1
0.015
0.007
—
—
—
—
MHz
dB
dB/°C
dB/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S26120HR3 MRF8S26120HSR3
RF Device Data
Freescale Semiconductor
3
C7
C2 C3
R1
C1
R2
C4
R3
C12
C5
C13*
C6
CUT OUT AREA
C11*
C16
C15*
C10
C8
C14*
MRF8S26120
Rev. 0
C9
*C11, C13, C14, and C15 are mounted vertically.
Figure 1. MRF8S26120HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S26120HR3(HSR3) Test Circuit Component Designations and Values
Part
C1
C2
C3
C4, C5, C8
C6, C9
C7, C10
C11, C12, C13, C14, C15
C16
R1
R2
R3
PCB
Description
22
μF,
35 V Tantalum Capacitor
330 nF, 100 V Chip Capacitor
15 nF, 100 V Chip Capacitor
2.2
μF,
100 V Chip Capacitors
22
μF,
50 V Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
27 pF Chip Capacitors
0.8 pF Chip Capacitor
1 kΩ, 1/4 W Chip Resistor
10 kΩ, 1/4 W Chip Resistor
7.5
Ω,
1/4 W Chip Resistor
0.030″,
ε
r
= 3.5
Part Number
T494X226K035AT
C3225X7R2A334KT
C3225C0G2A153JT
C3225X7R2A225KT
C5750JF1H226ZT
MCGPR63V477M13X26--RH
ATC800B270JT500XT
ATC100B0R8BT500XT
CRCW12061K00FKEA
CRCW120610K0FKEA
CRCW12067R50FNEA
RF--35
Manufacturer
Kemet
TDK
TDK
TDK
TDK
Multicomp
ATC
ATC
Vishay
Vishay
Vishay
Taconic
MRF8S26120HR3 MRF8S26120HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 28 W (Avg.), I
DQ
= 900 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
η
D
G
ps
IRL
η
D
, DRAIN
EFFICIENCY (%)
16
15.9
15.8
G
ps
, POWER GAIN (dB)
15.7
15.6
15.5
15.4
15.3
15.2
ACPR
PARC
32
31.8
31.6
31.4
31.2
--35
ACPR (dBc)
--36
--37
--38
--39
2710
--40
2730
--13
--14
--15
--16
--17
--18
IRL, INPUT RETURN LOSS (dB)
--1
--1.1
--1.2
--1.3
--1.4
--1.5
PARC (dB)
15.1
15
2570
2590
2610
2630
2650
2670
2690
f, FREQUENCY (MHz)
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 28 Watts Avg.
--10
--20
--30
--40
--50
--60
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 80 W (PEP), I
DQ
= 900 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2655 MHz
IM3--U
IM3--L
IM5--L
IM5--U
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
16.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
16
G
ps
, POWER GAIN (dB)
15.5
15
14.5
14
13.5
1
ACPR
η
D
--1
--2
--3
--4
--5
--1 dB = 25 W
--2 dB = 35 W
--3 dB = 45 W
V
DD
= 28 Vdc, I
DQ
= 900 mA, f = 2655 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
10
20
30
40
50
60
G
ps
PARC
10
0
40
30
20
η
D
,
DRAIN EFFICIENCY (%)
0
50
--30
--35
--40
--45
--50
--55
ACPR (dBc)
60
--25
P
out
, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S26120HR3 MRF8S26120HSR3
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
