电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N5261TRE3

产品描述Zener Diode, 47V V(Z), 20%, 0.5W,
产品类别分立半导体    二极管   
文件大小223KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
下载文档 详细参数 全文预览

1N5261TRE3概述

Zener Diode, 47V V(Z), 20%, 0.5W,

1N5261TRE3规格参数

参数名称属性值
是否Rohs认证符合
Reach Compliance Codecompli
ECCN代码EAR99
配置SINGLE
二极管类型ZENER DIODE
元件数量1
最高工作温度175 °C
最大功率耗散0.5 W
标称参考电压47 V
表面贴装NO
最大电压容差20%
工作测试电流2.7 mA
Base Number Matches1

文档预览

下载PDF文档
1N5221 thru 1N5281,e3 DO-7
500 mW GLASS AXIAL-LEAD
ZENER DIODES
SCOTTSDALE DIVISION
DESCRIPTION
The popular 1N5221 thru 1N5281B series of 0.5 watt Zener Voltage
Regulators provides a selection from 2.4 to 200 volts in standard 5% or 10%
tolerances as well as tighter tolerances identified by different suffix letters on
the part number. These glass axial-leaded DO-7 Zeners are also available
in various military screening levels by adding a prefix identifier as described
in the Features section. Microsemi also offers numerous other Zener
products to meet higher and lower power applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-7
(DO-204AA)
FEATURES
JEDEC registered 1N5221 to 1N5281B
Internally solder bonded
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers.
Surface mount equivalents available as MLL5221 to
MLL5281B in the DO-213AA MELF style package
(consult factory for others)
RoHS Compliant devices available by adding “e3” suffix
Smaller DO-35 glass body axial-leaded Zener
equivalents also available (see separate data sheet)
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current and
temperature range
Extensive selection from 2.4 to 200 V
Standard voltage tolerances are plus/minus 5% with
B suffix, 10 % with A suffix identification
Tight tolerances available in plus or minus 2% or 1%
with C or D suffix respectively
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
Minimal capacitance (see Figure 2)
Inherently radiation hard per MicroNote 050
MAXIMUM RATINGS
Operating and Storage temperature: -65
º
C to +175
º
C
Thermal Resistance: 300
º
C/W junction to lead at 3/8
(10 mm) lead length from body, or 360
º
C/W junction
to ambient when mounted on FR4 PC board (1 oz Cu)
with 4 mm
2
copper pads and track width 1 mm, length
25 mm
Steady-State Power: 0.5 watts at T
L
< 25
o
C 3/8 inch
(10 mm) from body or 0.417 W at T
A
< 25
º
C when
mounted on FR4 PC board as described for thermal
resistance above (also see Figure1)
Forward voltage @200 mA: 1.1 volts (maximum)
Solder Temperatures: 260
º
C for 10 s (max)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed axial-lead glass DO-7
(DO-204AA) package
FINISH: Tin-Lead or RoHS Compliant annealed
matte-Tin plating solderable per MIL-STD-750,
method 2026
POLARITY: Cathode indicated by band. Diode to be
operated with the banded end positive with respect to
the opposite end for Zener regulation
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.2 grams
See package dimensions on last page
Max Reverse Current
A, B, C & D Suffix Only
I
R
μA
100
100
75
75
50
25
15
10
5.0
50
1N5221─1N5281B, e3 DO-7
ELECTRICAL CHARACTERISTICS @ 25°C
JEDEC
Type No.
Note 1
Nominal
Zener
Voltage
V
Z
@ I
ZT
Volts
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
Test
Current
I
ZT
mA
20
20
20
20
20
20
20
20
20
20
Max Zener Impedance
A & B Suffix Only
Note 2
Z
ZT
@ I
ZK
Ohms
30
30
30
30
29
28
24
23
22
19
Non-Suffix
I
R
@ V
R
Used
For Suffix A
μA
200
200
150
150
100
100
100
75
50
50
Z
ZK
@ I
ZK
= 0.25
mA
Ohms
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
@
A
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
1.9
V
R
Volts
B,C & D
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
Max Zener
Voltage Temp.
Coeff.
(A & B Suffix
Only)
α
VZ
(% /
o
C)
Note 3
-0.085
-0.085
-0.080
-0.080
-0.075
-0.070
-0.065
-0.060
+/-0.055
+/-0.030
1N5221
1N5222
1N5223
1N5224
1N5225
1N5226
1N5227
1N5228
1N5229
1N5230
Copyright
©
2005
8-29-2005 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
●●●●●●51单片机串口通讯请教,有经验的指点一下
以前做过AT89C51和电脑的串口通讯程序,硬件上用的是三线连接(TxD,RxD,GND),没有问题. 现在我想做一个和温度读取设备(带RS232串口)通讯的单片机系统.这个温度读取设备的数据帧格式我已经破解 ......
hewitt09 嵌入式系统
什么是C .NET
什么是C .NET...
wwudii 嵌入式系统
ecos用的什么内核啊?
请问一下,ecos用的是什么内核啊?...
tsnana 嵌入式系统
求助一本半导体相关书籍《衍射极限附近的光刻工艺》
求助一本半导体相关书籍《衍射极限附近的光刻工艺》 ...
alitho 综合技术交流
DOS下播放任意长度WAV文件
哪位高人 帮帮 用C++ 利用中断方式播放任意长度WAV文件 利用DMA 和 DSP...
linjh052 嵌入式系统
低频有没有反射功率
在传输线理论中,高频是有反射功率的,那么低频有没有反射功率? 这个反射功率怎么计算?...
secondlife110 无线连接

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2097  2385  1744  1343  1697  30  54  42  39  29 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved