74HCT00D
CMOS Digital Integrated Circuits
Silicon Monolithic
74HCT00D
1. Functional Description
•
Quad 2-Input NAND Gate
2. General
The 74HCT00D is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The inputs are
compatible with TTL, NMOS and CMOS output voltage levels.
The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and
stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
(2)
(3)
(4)
(5)
High speed: t
pd
= 10 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 1.0
µA
(max) at T
a
= 25
Compatible with TTL outputs: V
IH
= 2.0 V (min)
: V
IL
= 0.8 V (max)
Wide interfacing ability: LSTTL, NMOS, CMOS
Balanced propagation delays: t
PLH
≈
t
PHL
4. Packaging
SOIC14
Start of commercial production
©2016 Toshiba Corporation
1
2016-05
2016-05-24
Rev.2.0
74HCT00D
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
©2016 Toshiba Corporation
2
2016-05-24
Rev.2.0
74HCT00D
8. Truth Table
A
L
L
H
H
B
L
H
L
H
Y
H
H
H
L
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±20
±20
±25
±50
500
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
t
r
,t
f
Rating
4.5 to 5.5
0 to V
CC
0 to V
CC
-40 to 85
0 to 500
Unit
V
V
V
ns
Note:
The operating ranges are required to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
3
2016-05-24
Rev.2.0
74HCT00D
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input leakage current
Quiescent supply
current
Symbol
V
IH
V
IL
V
OH
V
OL
I
IN
I
CC
I
CCT
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 0.5 V or
2.4 V
Other input: V
CC
or GND
I
OH
= -20
µA
I
OH
= -4 mA
I
OL
= 20
µA
I
OL
= 4 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
Min
2.0
4.4
4.18
Typ.
4.5
4.31
0.0
0.17
Max
0.8
0.1
0.26
±0.1
1.0
2.0
µA
µA
mA
V
Unit
V
V
V
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input leakage current
Quiescent supply current
Symbol
V
IH
V
IL
V
OH
V
OL
I
IN
I
CC
I
CCT
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 0.5 V or
2.4 V
Other input: V
CC
or GND
I
OH
= -20
µA
I
OH
= -4 mA
I
OL
= 20
µA
I
OL
= 4 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
Min
2.0
4.4
4.13
Max
0.8
0.1
0.33
±1.0
10.0
2.9
µA
µA
mA
V
Unit
V
V
V
©2016 Toshiba Corporation
4
2016-05-24
Rev.2.0
74HCT00D
11.3. AC Characteristics
(Unless otherwise specified, C
L
= 15 pF, V
CC
= 5 V, T
a
= 25
, Input: t
r
= t
f
= 6 ns)
Characteristics
Output transition time
Propagation delay time
Symbol
t
TLH
,t
THL
t
PLH
,t
PHL
Test Condition
Min
Typ.
4
10
Max
8
20
Unit
ns
11.4. AC Characteristics
(Unless otherwise specified, C
L
= 50 pF, T
a
= 25
, Input: t
r
= t
f
= 6 ns)
Characteristics
Output transition time
Propagation delay time
Input capacitance
Power dissipation capacitance
Symbol
t
TLH
,t
THL
t
PLH
,t
PHL
C
IN
C
PD
(Note 1)
Note
V
CC
(V)
4.5
5.5
4.5
5.5
Min
Typ.
8
7
13
12
5
19
Max
15
14
19
17
Unit
ns
ns
ns
ns
pF
pF
Note 1: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
I
CC(opr)
= C
PD
×
V
CC
×
f
IN
+ I
CC
/4 (per gate)
11.5. AC Characteristics
(Unless otherwise specified, C
L
= 50pF, T
a
= -40 to 85
, Input: t
r
= t
f
= 6 ns)
Characteristics
Output transition time
Propagation delay time
Symbol
t
TLH
,t
THL
t
PLH
,t
PHL
V
CC
(V)
4.5
5.5
4.5
5.5
Min
Max
19
18
24
21
Unit
ns
ns
ns
ns
©2016 Toshiba Corporation
5
2016-05-24
Rev.2.0
嵌入式系统
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