b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69819
S-80260-Rev. A, 04-Feb-08
New Product
SUD40N02-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
80
V
GS
= 10 thru 4
V
2.4
60
I
D
- Drain Current (A)
I
D
- Drain Current (A)
1.8
3.0
T
C
= - 55 °C
40
V
GS
= 3
V
1.2
T
C
= 25 °C
20
0.6
T
C
= 125 °C
V
GS
= 2
V
0
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0040
r
DS(on)
- D to S On-Resistance (Ω)
0.010
Transfer Characteristics
I
D
= 20 A
0.0036
V
GS
= 4.5
V
r
DS(on)
- On-Resistance (Ω)
0.008
0.006
T
A
= 125 °C
0.004
0.0032
0.0028
V
GS
= 10
V
0.002
T
A
= 25 °C
0.0024
0
20
40
60
80
100
0.000
2
4
6
8
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
8000
C
iss
V
GS
- Gate-to-Source
Voltage
(V)
8
6000
C - Capacitance (pF)
10
On-Resistance vs. V
GS
vs. Temperature
I
D
= 50 A
V
DS
= 10
V
6
V
DS
= 16
V
4000
4
2000
C
oss
2
C
rss
0
0
4
8
12
16
20
0
0
20
40
60
80
100
120
V
DS
- Drain-to-Source
Voltage
(V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 69819
S-80260-Rev. A, 04-Feb-08
Gate Charge
www.vishay.com
3
New Product
SUD40N02-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.7
I
D
= 20 A
1.5
r
DS(on)
- On-Resistance
V
GS
= 10
V,
4.5
V
(Normalized)
1.3
I
S
- Source Current (A)
T
J
= 150 °C
10
100
1.1
T
J
= 25 °C
0.9
0.7
- 50
- 25
0
25
50
75
100
125
150
175
1
0.0
0.2
0.4
0.6
0.8
1.0
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
2.4
200
Forward Diode Voltage vs. Temperature
2.0
150
V
GS(th)
(V)
1.6
I
D
= 250
µA
Power (W)
100
1.2
50
0.8
0.4
- 50
- 25
0
25
50
75
100
125
150
175
0
0.01
0.1
1
Time (s)
10
100
T
J
- Temperature (°C)
Threshold Voltage
250
1000
Single Pulse Power, Junction-to-Ambient
100
I
D
- Drain Current (A)
200
Power (W)
Limited
by
r
DS(on)
*
1 ms
10
10 ms
100 ms
1s
10 s
DC
150
1
0.1
100
0.01
T
A
= 25 °C
Single Pulse
50
0.001
0.01
0.1
Time (s)
1
10
0.001
0.01
0.1
1
BVDSS
10
100
Single Pulse Power, Junction-to-Case
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
r
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69819
S-80260-Rev. A, 04-Feb-08
New Product
SUD40N02-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1000
Limited
by
r
DS(on)
*
24
I
D
- Drain Current (A)
1 ms
10 ms
DC
30
100
I
D
- Drain Current (A)
10
18
1
12
0.1
0.01
T
A
= 25 °C
Single Pulse
0.001
0.01
BVDSS
6
0
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
r
DS(on)
is specified
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature (°C)
Safe Operating Area, Junction-to-Case
150
4
Current Derating**, Junction-to-Ambient
120
3
I
D
- Drain Current (A)
90
Power (W)
2
60
Package Limited
1
30
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Current Derating**, Junction-to-Case
100
Power Derating**, Junction-to-Ambient
80
Power (W)
60
40
20
** The power dissipation P
D
is based on T
J(max)
= 175 °C, using
0
0
25
50
75
100
125
150
175
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
