IS62WV102416ALL
IS62WV102416BLL
IS65WV102416BLL
1M x 16 HIGH-SPEED LOW POWER
ASYNCHRONOUS CMOS STATIC RAM
FEATURES
• High-speed access times:
25, 35 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
noise immunity
• Easy memory expansion with CS1 and OE options
•
CS1 power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
V
dd
1.65V to 2.2V (IS62WV102416ALL)
speed = 35ns for V
dd
1.65V to 2.2V
V
dd
2.4V to 3.6V (IS62/65WV102416BLL)
speed = 25ns for V
dd
2.4V to 3.6V
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
APRIL 2015
are high-speed, 16M-bit static RAMs organized as 1024K
words by 16 bits. It is fabricated using
ISSI
's high-perfor-
mance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The device is packaged in the JEDEC standard 48-pin
TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
DESCRIPTION
The
ISSI
IS62WV102416ALL/BLL and IS65WV102416BLL
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1024K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising
out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published informa-
tion and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of
the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its
satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
04/22/2015
1
IS62WV102416ALL
IS62WV102416BLL
IS65WV102416BLL
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE
X
X
X
H
H
H
H
H
L
L
L
CS1
H
X
X
L
L
L
L
L
L
L
L
CS2
X
L
X
H
H
H
H
H
H
H
H
OE
X
X
X
H
H
L
L
L
X
X
X
LB
X
X
H
L
X
L
H
L
L
H
L
UB
X
X
H
X
L
H
L
L
H
L
L
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
d
Out
High-Z
d
Out
d
in
High-Z
d
in
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
d
Out
d
Out
High-Z
d
in
d
in
V
DD
Current
i
sb
1
, i
sb
2
i
sb
1
, i
sb
2
i
sb
1
, i
sb
2
i
CC
i
CC
i
CC
i
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
term
V
dd
t
stg
P
t
Parameter
Terminal Voltage with Respect to GND
V
dd
Relates to GND
Storage Temperature
Power Dissipation
Value
–0.5 to V
dd
+ 0.5
–0.3 to 4.0
–65 to +150
1.0
Unit
V
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
C
in
C
i/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
in
= 0V
V
Out
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
a
= 25°C,
f = 1 MHz, V
dd
= 3.3V.
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
04/22/2015
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