MITSUBISHI IGBT MODULES
CM300DY-12NF
HIGH POWER SWITCHING USE
CM300DY-12NF
¡I
C ...................................................................
300A
¡V
CES ............................................................
600V
¡Insulated
Type
¡2-elements
in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Tc measured point (Base plate)
94
17
23
23
17
C2E1
E2
C1
E2 G2
4
G1 E1
12
2-φ6.5 MOUNTING HOLES
12
80±
0.25
12
4
3-M5 NUTS
20
(14)
48
13
18
4
TAB #110. t=0.5
16
7
16
7
16
7.5
C2E1
E2
C1
29
+0.1
–0.5
LABEL
CIRCUIT DIAGRAM
G1 E1
21.2
E2 G2
Mar.2003
MITSUBISHI IGBT MODULES
CM300DY-12NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25°C)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
DC, T
C
’ = 89°C
*3
Pulse
Pulse
T
C
= 25°C
Conditions
Ratings
600
±20
300
600
300
600
780
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
°C
°C
V
N•m
N•m
g
(Note 2)
(Note 2)
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c’)
Q
R
G
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
*1
Contact thermal resistance
Thermal resistance
External gate resistance
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 30mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
I
C
= 300A, V
GE
= 15V
T
j
= 125°C
V
CE
= 10V
V
GE
= 0V
V
CC
= 300V, I
C
= 300A, V
GE
= 15V
V
CC
= 300V, I
C
= 300A
V
GE1
= V
GE2
= 15V
R
G
= 2.1Ω, Inductive load switching operation
I
E
= 300A
I
E
= 300A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
*2
(1/2 module)
Tc measured point is just under the chips
Min.
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
Limits
Typ.
—
6
—
1.7
1.7
—
—
—
1200
—
—
—
—
—
5.5
—
—
—
0.07
—
—
Max.
1
7.5
0.5
2.2
—
45
5.5
1.8
—
120
120
350
300
150
—
2.6
0.16
0.25
—
0.093
*3
21
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
°C/W
Ω
*
1 : Tc measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : Tc’ measured point is just under the chips.
If you use this value, R
th(f-a)
should be measured just under the chips.
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150°C.
Mar.2003
MITSUBISHI IGBT MODULES
CM300DY-12NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
600
V
GE
=
20V
500
400
300
200
15
13
4
T
j
= 25°C
12
V
GE
= 15V
3
11
2
10
100
0
8
0
2
4
6
8
9
10
1
T
j
= 25°C
T
j
= 125°C
0
0
100
200
300
400
500
600
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
7
10
T
j
= 25°C
EMITTER CURRENT I
E
(A)
8
5
3
2
6
10
2
7
5
3
2
4
I
C
= 300A
I
C
= 600A
2
I
C
= 120A
0
6
8
10
12
14
16
18
20
T
j
= 25°C
T
j
= 125°C
0
1
2
3
4
5
10
1
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
10
2
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
C
ies
SWITCHING TIME (ns)
7
5
3
2
t
f
t
d(off)
t
d(on)
t
r
Conditions:
V
CC
= 300V
V
GE
=
±15V
R
G
= 2.1Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
10
1
7
5
3
2
10
2
7
5
3
2
C
oes
C
res
10
0
7
5
3
2
10
1
7
5
3
2
V
GE
= 0V
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
0 1
10
COLLECTOR CURRENT I
C
(A)
Mar.2003
MITSUBISHI IGBT MODULES
CM300DY-12NF
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
3
10
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
7
5
3
2
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
0
7
5
3
2
Single Pulse
T
C
= 25°C
10
–1
7
5
3
2
10
–1
7
5
3
2
10
2
7
5
3
2
I
rr
t
rr
Conditions:
V
CC
= 300V
V
GE
=
±15V
R
G
= 2.1Ω
T
j
= 25°C
Inductive load
2 3
5 7
10
3
10
1 1
10
2
3
5 7
10
2
IGBT part:
10
–2
Per unit base =
7
5
R
th(j–c)
= 0.16°C/W
FWDi part:
3
Per unit base =
2
R
th(j–c)
= 0.25°C/W
10
–3
10
–2
7
5
3
2
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
EMITTER CURRENT I
E
(A)
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
I
C
= 300A
16
V
CC
= 200V
V
CC
= 300V
12
8
4
0
0
200
800
1200
1600
600
1000
1400
GATE CHARGE Q
G
(nC)
400
Mar.2003
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