RN1110MFV, RN1111MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)
RN1110MFV, RN1111MFV
0.22 ± 0.05
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Ultra-small package, suited to very high density mounting
1.2 ± 0.05
0.8 ± 0.05
Unit: mm
1.2 ± 0.05
Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering
assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN2110MFV, RN2111MFV
1
0.4
1
3
2
0.13 ± 0.05
Equivalent Circuit
0.5 ± 0.05
0.4
VESM
1. BASE
2. EMITTER
3. COLLECTOR
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
5
100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
Pad Dimension（Reference）
Unit：mm
0.5
0.45
1.15
0.4
0.45
Start of commercial production
0.4
0.4
2005-02
1
2016-09-14
0.32 ± 0.05
0.80 ± 0.05
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