SRAM 4Mb, Low Power/Power Saver,Async,256K x 16,45ns,2.2v~3.6v,48 Ball mBGA (6x8 mm), RoHS
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ISSI(芯成半导体) |
产品种类 Product Category | SRAM |
RoHS | Details |
Memory Size | 4 Mbit |
Organization | 256 k x 16 |
Access Time | 45 ns |
接口类型 Interface Type | Parallel |
电源电压-最大 Supply Voltage - Max | 3.6 V |
电源电压-最小 Supply Voltage - Min | 2.2 V |
Supply Current - Max | 22 mA |
最小工作温度 Minimum Operating Temperature | - 40 C |
最大工作温度 Maximum Operating Temperature | + 85 C |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | TFBGA-48 |
系列 Packaging | Reel |
Memory Type | SDR |
类型 Type | Asynchronous |
Moisture Sensitive | Yes |
工厂包装数量 Factory Pack Quantity | 2500 |
IS62WV25616EBLL-45BLI-TR | IS62WV25616EALL-55BLI-TR | IS62WV25616EBLL-45TLI-TR | |
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描述 | SRAM 4Mb, Low Power/Power Saver,Async,256K x 16,45ns,2.2v~3.6v,48 Ball mBGA (6x8 mm), RoHS | IC SRAM | SRAM 4Mb, Low Power/Power Saver,Async,256K x 16,45ns,2.2v~3.6v,44 Pin TSOP II, RoHS |
Product Attribute | Attribute Value | - | Attribute Value |
制造商 Manufacturer |
ISSI(芯成半导体) | - | ISSI(芯成半导体) |
产品种类 Product Category |
SRAM | - | SRAM |
RoHS | Details | - | Details |
Memory Size | 4 Mbit | - | 4 Mbit |
Organization | 256 k x 16 | - | 256 k x 16 |
Access Time | 45 ns | - | 45 ns |
接口类型 Interface Type |
Parallel | - | Parallel |
电源电压-最大 Supply Voltage - Max |
3.6 V | - | 3.6 V |
电源电压-最小 Supply Voltage - Min |
2.2 V | - | 2.2 V |
Supply Current - Max | 22 mA | - | 22 mA |
最小工作温度 Minimum Operating Temperature |
- 40 C | - | - 40 C |
最大工作温度 Maximum Operating Temperature |
+ 85 C | - | + 85 C |
安装风格 Mounting Style |
SMD/SMT | - | SMD/SMT |
封装 / 箱体 Package / Case |
TFBGA-48 | - | TSOP-44 |
系列 Packaging |
Reel | - | Reel |
Memory Type | SDR | - | SDR |
类型 Type |
Asynchronous | - | Asynchronous |
Moisture Sensitive | Yes | - | Yes |
工厂包装数量 Factory Pack Quantity |
2500 | - | 1000 |
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