MOSFET 20V 1 N-CH HEXFET 23mOhms 8.7nC
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Infineon(英飞凌) |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | TO-252-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 39 A |
Rds On - Drain-Source Resistance | 23 mOhms |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 20.7 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd-功率耗散 Pd - Power Dissipation | 57 W |
Channel Mode | Enhancement |
系列 Packaging | Tube |
高度 Height | 2.3 mm |
长度 Length | 6.5 mm |
Transistor Type | 1 N-Channel |
类型 Type | Preliminary |
宽度 Width | 6.22 mm |
Fall Time | 89 ns |
NumOfPackaging | 1 |
Rise Time | 110 ns |
工厂包装数量 Factory Pack Quantity | 3200 |
Typical Turn-Off Delay Time | 41 ns |
Typical Turn-On Delay Time | 7.2 ns |
单位重量 Unit Weight | 0.139332 oz |
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