AUTOMOTIVE GRADE
AUIRF7103Q
Features
l
l
l
l
l
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HEXFET
®
Power MOSFET
Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified*
S1
G1
S2
G2
1
2
3
4
8
7
D1
D1
D2
D2
V
(BR)DSS
R
DS(on)
max.
I
D
50V
130m
3.0A
6
5
Top View
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
SO-8
AUIRF7103Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Max.
3.0
2.5
25
2.4
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
e
c
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
h
Peak Diode Recovery dv/dt
g
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Avalanche Current
c
f
16
± 20
22
See Fig. 16c, 16d, 19, 20
12
-55 to + 175
Thermal Resistance
Parameter
R
JL
R
JA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
fg
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
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1
December 5, 2012
AUIRF7103Q
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
50
––– –––
––– 0.057 –––
––– ––– 130
––– ––– 200
1.0 ––– 3.0
3.4 ––– –––
––– ––– 2.0
––– –––
25
––– ––– -100
––– ––– 100
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 3.0A
m
V
GS
= 4.5V, I
D
= 1.5A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 15V, I
D
= 3.0A
V
DS
= 40V, V
GS
= 0V
μA
V
DS
= 40V, V
GS
= 0V, T
J
= 55°C
V
GS
= 20V
nA
V
GS
= -20V
d
d
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
1.2
2.8
5.1
1.7
15
2.3
255
69
29
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 2.0A
nC V
DS
= 40V
V
GS
= 10V
V
DD
= 25V
I
D
= 1.0A
ns
R
G
= 6.0
R
D
= 25
V
GS
= 0V
pF V
DS
= 25V
ƒ = 1.0MHz
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
35
45
3.0
A
12
1.2
53
67
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Ã
S
p-n junction diode.
V T
J
= 25°C, I
S
= 1.5A, V
GS
= 0V
ns T
J
= 25°C,I
F
= 1.5A
nC di/dt = 100A/μs
d
d
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
400μs;
duty cycle
2%.
Surface mounted on 1 in square Cu board.
Starting T
J
= 25°C, L = 4.9mH, R
G
= 25, I
AS
= 3.0A. (See Figure 12).
I
SD
2.0A, di/dt
155A/μs, V
DD
V
(BR)DSS
, T
J
175°C.
Limited by T
Jmax
, see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance.
2
December 5, 2012
www.irf.com
AUIRF7103Q
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
SO-8
MSL1
Class M1A (+/- 50V)
AEC-Q101-002
Class H0 (+/- 250V)
AEC-Q101-001
†††
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
†††
ESD
Class C5 (+/- 1125V)
AEC-Q101-005
Yes
†††
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
December 5, 2012
AUIRF7103Q
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
4.5V
4.5V
10
1
20μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
20μs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
2.5
ID, Drain-to-Source Current
)
T J = 175°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 3.0A
2.0
10.00
T J = 25°C
1.5
1.0
0.5
1.00
3.0
6.0
VDS = 25V
20μs PULSE WIDTH
9.0
12.0
15.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
December 5, 2012
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AUIRF7103Q
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
V
GS
, Gate-to-Source Voltage (V)
12
I
D
=
2.0A
V
DS
= 40V
V
DS
= 25V
V
DS
= 10V
9
C, Capacitance(pF)
1000
Ciss
100
6
Coss
Crss
3
10
1
10
100
0
0
3
6
9
12
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T
J
= 175
°
C
ID, Drain-to-Source Current (A)
10
1
1
100μsec
1msec
T
J
= 25
°
C
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
10msec
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
0.01
V
SD
,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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5
December 5, 2012
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