VS-SD1700C..K Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes,
(Hockey PUK), 2100 A
FEATURES
• Wide current range
• High voltage ratings up to 4500 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style K-PUK (DO-200AC)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
K-PUK (DO-200AC)
TYPICAL APPLICATIONS
• Converters
2100 A
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
K-PUK (DO-200AC)
Single
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
TEST CONDITIONS
SD1700C..K
24 to 36
2080
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
Range
55
3600
25
24 000
25 150
2890
2630
2400 to 3600
-40 to +150
40 to 45
1875
55
3280
25
20 000
20 950
2000
1826
4000 to 4500
-40 to +150
UNITS
A
°C
A
°C
A
kA
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
24
30
VS-SD1700C..K
36
40
45
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
2400
3000
3600
4000
4500
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
2500
3100
3700
4100
4600
75
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 11-Jan-18
Document Number: 93539
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1700C..K Series
www.vishay.com
Vishay Semiconductors
SD1700C..K
24 to 36
2080
(1000)
55 (85)
3600
24 000
25 150
20 200
Sinusoidal half wave,
initial T
J
= T
J
maximum
21 150
2890
2630
2040
1860
28 900
0.89
1.02
0.23
0.21
1.81
40 to 45
1875 (920)
55 (85)
3280
20 000
20 950
16 800
17 600
2000
1826
1415
1292
20 000
0.88
0.99
0.31
m
r
f2
V
FM
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 4000 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
0.29
2.11
V
kA
2
s
V
kA
2
s
A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope
resistance
High level value of forward slope
resistance
Maximum forward voltage drop
No voltage
reapplied
50 % V
RRM
reapplied
No voltage
reapplied
50 % V
RRM
reapplied
UNITS
A
°C
I
F(AV)
I
F(RMS)
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to +150
-55 to +200
0.042
0.020
22 250 (2250)
425
UNITS
°C
K/W
N (kg)
g
K-PUK (DO-200AC)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.002
0.002
0.003
0.004
0.007
DOUBLE SIDE
0.002
0.002
0.003
0.004
0.007
RECTANGULAR CONDUCTION
SINGLE SIDE
0.001
0.002
0.003
0.004
0.007
DOUBLE SIDE
0.001
0.002
0.003
0.004
0.007
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93539
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1700C..K Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
150
Maximum Allowable Heatsink Tem perature (°C)
140
130
120
110
100
90
80
70
60
50
40
0
200
400
600
800 1000 1200 1400
Avera ge Forward Current (A)
30°
60°
180°
90°
120°
Co n duc tion An g le
M a x im um A llo w a b le H e a tsin k T e m p e ra tu re (°C )
SD1700C..K Series (2400V to 3600V )
(Single Side Cooled)
R
t hJ-hs
(DC) = 0.042 K/W
S D 1 7 0 0 C ..K S e rie s (2 4 0 0 V t o 3 6 0 0 V )
(D o ub le S id e C o o le d )
R
th J- hs
(D C ) = 0 .0 2 0 K /W
Co n duc tio n P erio d
30 °
60 °
90°
1 2 0°
1 8 0°
DC
10 0 0
20 0 0
30 0 0
4 00 0
A v e ra g e F o rw a rd C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
M a xim um A llo w a b le H e a t sin k Te m p e ra t ure (°C )
M a xim u m A llo w a b le H e a t sink T e m p e ra t u re (°C )
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
150
S D 1 7 0 0 C ..K S e rie s (2 4 0 0 V t o 3 6 0 0 V )
(S in g le S id e C o o le d )
R
th J- hs
(D C ) = 0 .0 4 2 K / W
140
130
120
110
100
90
80
70
60
50
40
0
200
40 0
60 0
8 0 0 1 0 00 12 0 0 1 4 00
A v e ra g e F o r w a rd C u rre n t (A )
3 0°
60°
90 °
1 2 0°
180 °
C o nduc tio n An gle
S D 1 7 0 0 C ..K S e rie s (4 0 0 0 V to 4 5 0 0 V )
(S in g le Sid e C o o le d )
R
t hJ-hs
(D C ) = 0 .0 4 2 K /W
C o nduc tio n Period
30 °
60°
90°
120°
180 °
DC
20 0 0
2 5 00
500
1 00 0
1 50 0
A v e ra g e F o rw a rd C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
150
Maxim um Allow able Heatsin k Tem perature (°C)
130
120
110
100
90
80
70
60
50
40
30
0
500
1000
1500
2000
2500
Average Forw ard Current (A)
30°
60°
90°
120°
180°
C o nduc tio n A ng le
M axim um Allowa ble Hea tsink Temperature°C)
(
140
SD1700C..K Series (2400V to 3600V)
(Double Side Cooled)
R
thJ-h s
(DC) = 0.020 K/W
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
SD 1700C..K Series ( 4000V to 4500V)
(Sin gle Side Cooled)
R
th J- hs
(DC) = 0.042 K/W
C o ndu ctio n Pe rio d
30°
60°
90°
120° 180°
DC
2000
400
800
1200
1600
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
Revision: 11-Jan-18
Document Number: 93539
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1700C..K Series
www.vishay.com
Vishay Semiconductors
7000
Maxim um Average Forward Pow er Loss (W )
150
Maxim um Allowable Heatsin k Tem perature ( °C)
140
130
120
110
100
90
80
70
60
50
40
30
0
400
800
1200
1600
2000
2400
Average Forward Current (A)
30°
60°
90°
120°
180°
C o ndu ctio n A ng le
SD 1700C..K Series (4000V to 4500V)
(D ouble Sid e Cooled)
R
th J- hs
(DC) = 0.020 K/W
6000
5000
4000
3000
DC
180°
120°
90°
60°
30°
RMS Limit
Co n duc tion Perio d
2000
1000
0
0
1000
2000
3000
4000
Average Forward Current (A)
SD 1700C..K Series
(2400V to 3600V )
T
J
= 150°C
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e ( °C )
M ax im u m A v e ra g e Fo rw a rd Po w e r Lo ss (W )
1 50
1 40
1 30
1 20
1 10
1 00
90
80
70
60
50
40
30
20
0
SD 1 7 0 0 C ..K Se rie s (4 0 0 0 V t o 4 5 0 0 V )
(D o u b le Sid e C o o le d )
R
th J-hs
(D C ) = 0 .0 2 0 K/ W
6 0 00
5 0 00
4 0 00
3 0 00
2 0 00
1 0 00
0
0
5 00
1 0 00
15 0 0
2 0 00
2 5 00
A v e ra g e F o rw a rd C u rre n t (A )
C o nduc tio n An gle
1 8 0°
1 2 0°
90°
60°
30°
R M S Lim it
C o ndu ct io n Pe rio d
30°
60°
90°
1 2 0°
1 8 0°
DC
5 00 10 0 0 15 0 0 20 0 0 25 0 0 3 0 00 3 5 00
A v e ra g e F o rw a r d C u rre n t (A )
S D 1 7 0 0 C ..K S e rie s
(4 0 0 0 V t o 4 5 0 0 V )
T
J
= 1 5 0°C
Fig. 8 - Current Ratings Characteristics
Fig. 11 - Forward Power Loss Characteristics
6 00 0
M a x im u m A v e ra g e Fo r w a rd P o w e r Lo ss (W )
5 00 0
4 00 0
3 00 0
2 00 0
1 00 0
0
0
5 00
10 0 0
1 5 00
2 00 0
2 50 0
A v e ra g e Fo rw a rd C u rre n t (A )
1 8 0°
1 2 0°
9 0°
6 0°
3 0°
M a x im u m A v e ra g e Fo r w ar d Po w e r Lo ss (W )
7000
6000
5000
4000
3000
C o ndu c tio n P e rio d
R M S Lim it
DC
1 8 0°
1 2 0°
9 0°
6 0°
3 0°
R M S Lim it
C o nduc tio n Ang le
2000
1000
0
0
50 0 1 0 00 15 0 0 2 00 0 2 50 0 30 0 0 3 50 0
A v e r a g e Fo rw a rd C u rre n t (A )
S D 1 7 0 0 C ..K S e rie s
(4 0 0 0 V t o 4 5 0 0 V )
T
J
= 1 5 0°C
S D 1 7 0 0 C ..K S e rie s
(2 4 0 0 V t o 3 6 0 0 V )
T
J
= 1 5 0°C
Fig. 9 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93539
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1700C..K Series
www.vishay.com
Vishay Semiconductors
22000
P e a k H a lf S in e W a v e F o rw a rd C u rre n t (A )
20000
18000
16000
14000
12000
10000
8000
6000
4000
0.01
S D 1 7 0 0 C ..K S e r ie s
(4 0 0 0 V t o 4 5 0 0 V )
0.1
P u lse Tra in D u ra t io n (s)
1
M a xim u m N o n R e p e t it iv e Su rg e C u rre n t
V e rsu s P ulse T ra in D ura t io n .
In it ia l T
J
= 1 5 0° C
N o V o lt a g e R e a p p lie d
5 0 % R a t e d V
RR M
R e a p p lie d
25000
Peak Half Sine W ave Forw ard Current ( A)
At An y Rated Load Condition And W ith
50% Rated V
R RM
Applied Following Surge
In itial T
J
= 150°C
@ 60 Hz 0.0083 s
20000
@ 50 Hz 0.0100 s
15000
10000
SD1700C..K Series
(2400V to 3600V)
5000
1
10
1 00
Nu m b er O f E qua l A m p lit ude Ha lf Cy c le C urrent Pulse s (N )
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
25000
Peak Half Sine W ave Forw ard Curren t (A)
20000
15000
Instantaneous Forw ard Current (A)
M aximum Non Repetitive Surge Current
Versus Pulse Train Duration.
In itial T
J
= 150°C
No V oltage Reapplied
50% Rated V
R RM
Reapplied
10000
1000
T
J
= 25°C
T
J
= 150°C
SD1700C..K Series
(2400V to 3600V )
100
0. 5
1
1.5
2
2.5
3
10000
SD 1700C..K Series
(2400V to 3600V)
5000
0.01
0.1
Pulse Train Duration (s)
1
Instantan eous Forward V oltage (V)
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
2 0 00 0
P e a k H a lf S in e W a v e Fo rw a rd C u rre n t (A )
1 4 00 0
1 2 00 0
1 0 00 0
8 00 0
6 00 0
4 00 0
1
10
1 00
Num be r O f Equ al A m plitud e Ha lf Cy c le C urre nt Pulse s (N )
Instantan eous Forward Curren t (A)
A t A n y R a t e d Lo a d C o n d itio n A n d W ith
5 0 % R a t e d V
R RM
A p p lie d F o llo w in g Su rg e
1 8 00 0
In itia l T
J
= 1 5 0°C
@ 6 0 H z 0 .0 0 8 3 s
1 6 00 0
@ 5 0 H z 0 .0 1 0 0 s
10000
1000
T
J
= 25°C
T
J
= 150°C
SD 1 7 0 0 C ..K S e rie s
(4 0 0 0 V t o 4 5 0 0 V )
SD1700C..K Series
(4000V to 4500V )
100
0.5
1
1.5
2
2.5
3
3.5
4
In stan tan eous Forwa rd V oltage (V )
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 18 - Forward Voltage Drop Characteristics
Revision: 11-Jan-18
Document Number: 93539
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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