Freescale Semiconductor
Technical Data
Document Number: MRF5S9100N
Rev. 5, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
•
Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
DD
= 26 Volts,
I
DQ
= 950 mA, P
out
= 20 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.5 dB
Drain Efficiency — 28%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S9100NR1
MRF5S9100NBR1
880 MHz, 20 W AVG., 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9100NBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, + 15
336
1.92
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 20 W CW
Symbol
R
θJC
Value
(1,2)
0.52
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S9100NR1 MRF5S9100NBR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μA)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 950 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.0 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6 Adc)
Dynamic Characteristics
(1)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
C
rss
—
—
70
2.2
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
—
—
—
2.8
3.7
0.21
7
3.5
—
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 950 mA, P
out
= 20 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @
±750
kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally input matched.
G
ps
η
D
ACPR
IRL
18
26
—
—
19.5
28
- 46.8
- 19
—
—
- 45
-9
dB
%
dBc
dB
MRF5S9100NR1 MRF5S9100NBR1
2
RF Device Data
Freescale Semiconductor
B1
V
BIAS
+
C22
+
C21
+
C20
C19
C18
L1
L2
C17
C16
+
C15
V
SUPPLY
+
C14
+
C13
C6
RF
INPUT
DUT
Z1
C1
Z2
Z3
C2
Z4
C3
Z5
C4
Z6
Z7
C5
Z8
Z9
C8
Z10
Z11
Z12
C10
Z13
Z14
C12
Z15
RF
OUTPUT
C7
C9
C11
Z1, Z15
Z2
Z3
Z4
Z5
Z6, Z11
Z7
0.200″ x 0.080″ Microstrip
0.105″ x 0.080″ Microstrip
0.954″ x 0.080″ Microstrip
0.115″ x 0.220″ Microstrip
0.375″ x 0.220″ Microstrip
0.200″ x 0.220″ x 0.620″ Taper
0.152″ x 0.620″ Microstrip
Z8
Z9
Z10
Z12
Z13
Z14
PCB
0.163″ x 0.620″ Microstrip
0.238″ x 0.620″ Microstrip
0.077″ x 0.620″ Microstrip
0.381″ x 0.220″ Microstrip
0.114″ x 0.220″ Microstrip
1.052″ x 0.080″ Microstrip
Arlon GX0300, 0.030″,
ε
r
= 2.55
Figure 1. MRF5S9100NR1(NBR1) Test Circuit Schematic
Table 6. MRF5S9100NR1(NBR1) Test Circuit Component Designations and Values
Part
B1
C1, C12, C18
C2
C3, C11
C4
C5, C6
C7, C8
C9, C10
C13
C14, C15
C16, C17, C19
C20, C21
C22
L1
L2
Description
Ferrite Bead, Surface Mount
18 pF Chip Capacitors
0.6 - 4.5 pF Variable Capacitor, Gigatrim
0.8 - 8.0 pF Variable Capacitors, Gigatrim
6.2 pF Chip Capacitor
12 pF Chip Capacitors
11 pF Chip Capacitors
5.1 pF Chip Capacitors
470
mF,
63 V Electrolytic Capacitor
22
mF,
50 V Tantalum Capacitors
0.56
mF,
50 V Chip Capacitors
47
mF,
16 V Tantalum Capacitors
100
mF,
50 V Electrolytic Capacitor
7.15 nH Inductor
22 nH Inductor
Part Number
2743019447
100B180JP 500X
27271SL
27291SL
100B6R2JP 500X
100B120JP 500X
100B110JP 500X
100B5R1JP 500X
NACZF471M63V
T491X226K035AS
C1825C564J5GAC
T491D4T6K016AS
515D107M050BB6A
1606 - 7
B07T - 5
Manufacturer
Fair - Rite
ATC
Johanson Dielectrics
Johanson Dielectrics
ATC
ATC
ATC
ATC
Nippon
Kemet
Kemet
Kemet
Multicomp
CoilCraft
CoilCraft
MRF5S9100NR1 MRF5S9100NBR1
RF Device Data
Freescale Semiconductor
3
C21 C20
C15 C14
V
GG
C22
C19
C16
C13
V
DD
C17
C10
C4
CUT OUT AREA
L1
WB1
WB2
B1
C18
C1
C6
C8
C12
L2
C2
C3
C5
C9
C7
C11
MRF9100M
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S9100NR1(NBR1) Test Circuit Component Layout
MRF5S9100NR1 MRF5S9100NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
22
20
G ps , POWER GAIN (dB)
18
16
14
12
10
8
6
830
840
ALT
IRL
ACPR
G
ps
η
D
V
DD
= 26 Vdc, P
out
= 20 W (Avg.), I
DQ
= 950 mA
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)
50
40
30
20
−30
−40
−50
−60
850
860
870
880
890
900
910
−70
920
η
D , DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT (dBc)
−10
−15
−20
−25
−30
η
D , DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT (dBc)
−10
−15
−20
−25
−30
f, FREQUENCY (MHz)
Figure 3. IS - 95 Broadband Performance @ P
out
= 20 Watts Avg.
22
20
G ps , POWER GAIN (dB)
18
16
14
IRL
12
10
8
6
830
ALT
840
850
860
870
880
890
900
910
ACPR
G
ps
η
D
10
8
6
V
DD
= 26 Vdc, P
out
= 2 W (Avg.), I
DQ
= 950 mA
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)
4
−40
−50
−60
−70
−80
920
f, FREQUENCY (MHz)
Figure 4. IS - 95 Broadband Performance @ P
out
= 2 Watts Avg.
21
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1425 mA
1150 mA
950 mA
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
0.1
1
700 mA
V
DD
= 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements
10
100
1000
950 mA
1150 mA
I
DQ
= 475 mA
1425 mA
20
G ps , POWER GAIN (dB)
19
700 mA
18
475 mA
V
DD
= 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements
1
10
100
1000
17
16
0.1
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S9100NR1 MRF5S9100NBR1
RF Device Data
Freescale Semiconductor
5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
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