Si4830DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
I
D
(A)
7.5
6.5
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.50 V @ 1.0 A
I
F
(A)
2.0
D
1
D
1
D
2
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information: Si4830DY
Si4830DY-T1 (with Tape and Reel)
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
30
"20
7.5
6.0
30
1.7
2.0
1.3
- 55 to 150
Steady State
Unit
V
5.7
4.6
0.9
1.1
0.7
W
_C
A
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
MOSFET
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
www.vishay.com
t
v
10 sec
Steady-State
Steady-State
Schottky
Typ
53
93
35
Symbol
R
thJA
R
thJC
Typ
52
93
35
Max
62.5
110
40
Max
62.5
110
40
Unit
_C/W
C/W
1
Si4830DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED).
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V T
J
= 85_C
V
V,
On-State Drain
Current
b
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.5 A
V
GS
= 4.5 V, I
D
= 6.5 A
V
DS
= 15 V, I
D
= 7.5 A
I
S
= 1 A V
GS
= 0 V
A,
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
Ch 1
Ch-1
Ch-2
20
0.018
0.024
22
0.8
0.47
1.2
0.5
0.022
0.030
0.8
"100
1
100
15
2000
A
W
S
V
mA
V
nA
Symbol
Test Condition
Min
Typ
a
Max
Unit
Drain-Source On-State
Drain Source On State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Source Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1 7 A di/dt = 100 A/ms
1.7 A,
Ch 1
Ch-1
Ch-2
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
0.5
8
10
21
10
40
32
V
DS
= 15 V, V
GS
= 10 V, I
D
= 7.5 A
,
,
13
2
2.7
3.2
16
20
40
20
80
70
ns
W
20
nC
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
V
F
Test Condition
I
F
= 1.0 A
I
F
= 1.0 A, T
J
= 125_C
V
r
= 30 V
V
r
= 30 V, T
J
= 100_C
V
r
= - 30 V, T
J
= 125_C
V
r
= 10 V
Min
Typ
0.47
0.36
0.004
0.7
3.0
50
Max
0.50
0.42
0.100
10
20
Unit
V
Maximum Reverse Leakage Current
g
Junction Capacitance
I
rm
C
T
mA
pF
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2
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
Si4830DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10 thru 4 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
3V
16
20
MOSFET
Transfer Characteristics
12
12
8
8
T
C
= 125_C
4
25_C
- 55_C
4
2V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.040
r
DS(on)
- On-Resistance (
W
)
1000
Capacitance
C - Capacitance (pF)
0.032
V
GS
= 4.5 V
V
GS
= 10 V
0.016
800
C
iss
600
0.024
400
C
oss
200
C
rss
0.008
0.000
0
4
8
12
16
20
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 7.5 A
8
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 7.5 A
1.4
6
r
DS(on)
- On-Resistance (
W)
(Normalized)
6
9
12
15
1.2
4
1.0
2
0.8
0
0
3
Q
g
- Total Gate Charge (nC)
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
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Si4830DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
T
J
= 150_C
0.04
MOSFET
On-Resistance vs. Gate-to-Source Voltage
I
S
- Source Current (A)
10
r
DS(on)
- On-Resistance (
W
)
I
D
= 7.5 A
0.03
0.02
T
J
= 25_C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50
10
Power (W)
30
50
Single Pulse Power
40
20
- 25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
1
10
100
600
T
J
- Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 93_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
Si4830DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
10
I
R
- Reverse Current (mA)
SCHOTTKY
Forward Voltage Drop
10
T
J
= 150_C
Reverse Current vs. Junction Temperature
0.1
30 V
24 V
I
F
- Forward Current (A)
1
T
J
= 25_C
0.01
0.001
0.0001
0
25
50
75
100
125
150
T
J
- Temperature (_C)
200
1
0.0
0.3
0.6
0.9
1.2
1.5
V
F
- Forward Voltage Drop (V)
Capacitance
160
C - Capacitance (pF)
120
80
C
oss
40
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
www.vishay.com
5
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