NSR0340V2
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0340V2 in a SOD−523 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
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Very Low Forward Voltage Drop
−
410 mV @ 100 mA
Low Reverse Current
−
0.5
mA
@ 25 V V
R
250 mA of Continuous Forward Current
Power Dissipation of 200 mW with Minimum Trace
Very High Switching Speed
Low Capacitance
−
C
T
= 6 pF
This is a Pb−Free Device
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs and PDAs
GPS
40 VOLT SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
Typical Applications
1
2
SOD−523
CASE 502
MARKING DIAGRAM
AD M
G
G
Markets
1
2
AD = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation position may vary depending
upon manufacturing location.
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Continuous Current (DC)
Non−Repetitive Peak Forward Surge
Current
ESD Rating: Human Body Model
Machine Model
Symbol
V
R
I
F
I
FSM
ESD
Value
40
250
1.0
Class 2
Class A
Unit
Vdc
mA
A
ORDERING INFORMATION
Device
Package
Shipping
†
3000 / Tape & Reel
8000 / Tape & Reel
NSR0340V2T1G SOD−523
(Pb−Free)
NSR0340V2T5G SOD−523
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
June, 2013
−
Rev. 1
1
Publication Order Number:
NSR0340V2T1/D
NSR0340V2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Junction and Storage Temperature Range
Symbol
R
qJA
P
D
R
qJA
P
D
T
J
, T
stg
Max
600
200
300
400
−55
to +150
Unit
°C/W
mW
°C/W
mW
°C
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Leakage
(V
R
= 10 V)
(V
R
= 25 V)
(V
R
= 40 V)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 200 mA)
Total Capacitance
(V
R
= 10 V, f = 1 MHz)
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R
= 1.0 mA)
Symbol
I
R
Min
Typ
0.2
0.5
1.5
310
410
470
6.0
5.0
Max
1.0
3.0
6.0
350
450
510
Unit
mA
V
F
mV
CT
pF
ns
t
rr
DC Current
Source
+
−
0.1
mF
0V
t
r
t
p
10%
750
mH
0.1
mF
I
F
V
R
90%
50
W
Output
Pulse
Generator
Pulse Generator
Output
I
F
DUT
t
rr
Adjust for I
RM
R
L
= 50
W
Current
Transformer
50
W
Input
Oscilloscope
1.
2.
3.
4.
5.
I
RM
i
R(REC)
= 1 mA
Output Pulse
(I
F
= I
RM
= 10 mA; measured
at i
R(REC)
= 1 mA)
DC Current Source is adjusted for a Forward Current (I
F
) of 10 mA.
Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I
RM
of 10 mA.
Pulse Generator transition time << t
rr
.
I
R(REC)
is measured at 1 mA. Typically 0.1 X I
RM
or 0.25 X I
RM
.
t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSR0340V2
PACKAGE DIMENSIONS
SOD−523
CASE 502
ISSUE E
−X−
D
−Y−
E
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
DIM
A
b
c
D
E
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
b
0.08
1
M
2
X Y
TOP VIEW
A
c
H
E
SIDE VIEW
2X
2X
RECOMMENDED
SOLDERING FOOTPRINT*
1.80
0.40
2X
L
0.48
2X
L2
PACKAGE
OUTLINE
DIMENSION: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NSR0340V2T1/D