IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
DISCRETE SEMICONDUCTORS
DATA SHEET
BYV40E series
Rectifier diodes
ultrafast, rugged
Product
specification
September 1998
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• low profile surface mounting
package
BYV40E series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
a1
1
k 2
a2
3
V
F
≤
0.7 V
I
O(AV)
= 1.5 A
I
RRM
= 0.1 A
t
rr
≤
25 ns
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV40E series is supplied in
the SOT223 surface mounting
package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
cathode
SOT223
4
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYV40E
T
sp
≤
120˚C
-
-
-
-
-
-
-
MIN.
-150
150
150
150
1.5
1.5
6
6.6
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
I
RRM
I
RSM
T
stg
T
j
square wave;
δ
= 0.5;
T
sp
≤
132˚C
t = 25
µs; δ
= 0.5;
T
sp
≤
132 ˚C
t
p
= 10 ms
t
p
= 8.3 ms
sinusoidal; T
j
= 150˚C prior
to surge; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
-
-
-65
-
0.1
0.1
150
150
A
A
˚C
˚C
1
Neglecting switching and reverse current losses
September 1998
1
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
BYV40E series
MAX.
8
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-a
PARAMETER
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
one or both diodes conducting
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:11
MIN.
-
-
-
TYP.
-
156
70
MAX.
15
-
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
CONDITIONS
I
F
= 0.5 A; T
j
= 150˚C
I
F
= 1.5 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 2 A; dI
F
/dt = 20 A/µs
MIN.
-
-
-
-
-
-
-
-
TYP.
0.50
0.82
100
5
-
-
10
3
MAX.
0.7
1.0
300
10
11
25
20
-
UNIT
V
V
µA
µA
nC
ns
ns
V
September 1998
2
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
R
I
s
10%
100%
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
1
PF / W
Vo = 0.66 V
Rs = 0.08 Ohms
BYV40
Tsp(max) / C
135
0.8
0.5
D = 1.0
138
0.6
141
time
VF
V
VF
time
fr
0.2
0.4
0.1
I
t
p
D=
t
p
T
t
144
0.2
T
147
0
0
0.2
0.4
0.6
0.8
IF(AV) / A
1
1.2
150
1.4
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.66 V
Rs = 0.08 Ohms
R
0.7
0.6
0.5
BYV40
Tsp(max) / C
139.5
141
142.5
144
145.5
147
148.5
a = 1.57
1.9
2.2
2.8
4
D.U.T.
Voltage Pulse Source
0.4
0.3
Current
shunt
0.2
to ’scope
0.1
0
0
0.1
0.2
0.3
0.4
0.5
IF(AV) / A
0.6
0.7
150
0.8
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
September 1998
3
Rev 1.300
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