IS61NLF25636B/IS61NVF/NVVF25636B
IS61NLF51218B/IS61NVF/NVVF51218B
256K x 36 and 512K x 18
9Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single Read/Write control pin
• Clock controlled, registered address,
data and control
• Interleaved or linear burst sequence control us-
ing MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
•
CKE
pin to enable clock and suspend operation
• JEDEC 100-pin QFP, 119-ball BGA, and 165-
ball BGA packages
• Power supply:
NLF: V
dd
3.3V (± 5%), V
ddq
3.3V/2.5V (± 5%)
NVF: V
dd
2.5V (± 5%), V
ddq
2.5V (± 5%)
NVVF: V
dd
1.8V (± 5%), V
ddq
1.8V (± 5%)
• JTAG Boundary Scan for BGA packages
• Industrial temperature available
• Lead-free available
MAY 2016
DESCRIPTION
The 9 Meg product family features high-speed, low-power
synchronous static RAMs designed to provide a burstable,
high-performance, 'no wait' state, device for networking and
communications applications. They are organized as 256K
words by 36 bits and 512K words by 18 bits, fabricated
with
ISSI
's advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable,
CKE
is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the ADV
input. When the ADV is HIGH the internal burst counter
is incremented. New external addresses can be loaded
when ADV is LOW.
Write cycles are internally self-timed and are initiated
by the rising edge of the clock inputs and when
WE
is
LOW. Separate byte enables allow individual bytes to be
written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
6.5
6.5
7.5
133
7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A1
05/23/2016
1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
