TSD20H100CW - TSD20H200CW
Taiwan Semiconductor
20A, 100V - 200V Trench Schottky Rectifier
FEATURES
●
●
●
●
●
●
Patented Trench Schottky technology
Excellent high temperature stability
Low forward voltage
Low power loss/ high efficiency
High forward surge capability
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
2 x 10
100 - 200
150
150
2
UNIT
A
V
A
°C
TO-263AB(D PAK)
Dual die
APPLICATIONS
●
●
●
●
Lighting application
Switching mode power supply (SMPS)
Adapters
On-board DC/DC converter
MECHANICAL DATA
● Case: TO-263AB(D PAK)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 1.6 mg (approximately)
2
TO-263AB(D PAK)
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Per device
Per diode
Surge peak forward current, 8.3 ms single half
sine-wave superimposed on rated load per diode
Critical rate of rise of off-state voltage
Forward current
Junction temperature
Storage temperature
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
SYMBOL
TSD20H
100CW
TSD20H
100CW
100
TSD20H TSD20H TSD20H
120CW
150CW
200CW
TSD20H TSD20H TSD20H
120CW
150CW
200CW
120
150
200
20
10
150
10,000
-55 to +150
-55 to +150
UNIT
V
A
A
V/µs
°C
°C
1
Version:E1705
TSD20H100CW - TSD20H200CW
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-case thermal resistance
SYMBOL
R
ӨJL
R
ӨJC
LIMIT
3.8
2.8
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
I
F
= 5A, T
J
= 25°C
TSD20H100CW
I
F
=10A, T
J
= 25°C
I
F
= 5A, T
J
= 125°C
I
F
= 10A, T
J
= 125°C
I
F
= 5A, T
J
= 25°C
TSD20H120CW
Forward voltage per
diode
(1)
SYMBOL
TYP
0.57
0.67
0.50
0.59
0.62
0.78
0.53
0.63
MAX
-
0.79
-
0.68
-
0.87
UNIT
V
V
V
V
V
V
V
I
F
=10A, T
J
= 25°C
I
F
= 5A, T
J
= 125°C
I
F
= 10A, T
J
= 125°C
I
F
= 5A, T
J
= 25°C
I
F
=10A, T
J
= 25°C
I
F
= 5A, T
J
= 125°C
I
F
= 10A, T
J
= 125°C
I
F
= 5A, T
J
= 25°C
V
F
-
0.72
0.90
-
0.75
-
0.93
-
0.78
200
25
100
15
V
V
V
V
V
V
V
V
V
µA
mA
µA
mA
0.72
0.81
0.58
0.66
0.77
0.83
0.62
0.68
-
8
TSD20H150CW
TSD20H200CW
I
F
=10A, T
J
= 25°C
I
F
= 5A, T
J
= 125°C
I
F
= 10A, T
J
= 125°C
TSD20H100CW
Reverse current @
rated V
R
per diode
(2)
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
R
TSD20H120CW
TSD20H150CW
TSD20H200CW
-
3
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:E1705
TSD20H100CW - TSD20H200CW
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSD20HxxxCW
(Note 1 , 2)
PACKING
CODE
C0
MN
PACKING CODE
SUFFIX
G
PACKAGE
D PAK
2
PACKING
50 / Tube
800 / 13" Plastic reel
Notes:
1. "xxx" defines voltage from 100V (TSD20H100CW) to 200V (TSD20H200CW)
2.
Whole series with green compound (halogen-free)
EXAMPLE
EXAMPLE P/N
PART NO.
PACKING CODE
C0
PACKING CODE SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
TSD20H100CW C0G TSD20H100CW
3
Version:E1705
TSD20H100CW - TSD20H200CW
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
25
AVERAGE FORWARD CURRENT (A)
Fig.2 Typical Junction Capacitance
10000
f=1.0MHz
Vsig=50mVp-p
20
CAPACITANCE (pF)
TSD20H100CW
1000
TSD20H120CW
15
10
100
TSD20H200CW
5
WITH HEATSINK
3in x 5in x 0.25in Al-Plate
0
0
25
50
75
100
125
150
CASE TEMPERATURE (
o
C)
TSD20H150CW
10
0.1
1
10
REVERSE VOLTAGE (V)
100
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (mA)
Fig.4 Typical Forward Characteristics
INSTANTANEOUS FORWARD CURRENT (A)
100
TSD20H100CW
10
1
0.1
0.01
0.001
0.0001
10
20
30
40
50
60
70
80
90
100
T
J
=25
o
C
T
J
=150
o
C
100
10
TSD20H100CW
T
J
=125
o
C
T
J
=100
o
C
10
1
UF1DLW
T
J
=150
o
C
T
J
=125°C
T
J
=125
o
C
T
J
=25°C
(A)
0.1
1
0.01
0.1
0.001
T
J
=100
o
C
T
J
=25
o
C
0.01
0.3
0.0
0.4
0.5
0.6
0.7
0.8
Pulse width
0.9
1
1.1
1.2
0.2
0.4
0.6
0.8
1.0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:E1705
TSD20H100CW - TSD20H200CW
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (mA)
Fig.6 Typical Forward Characteristics
INSTANTANEOUS FORWARD CURRENT (A)
100
TSD20H120CW
10
1
T
J
=125
o
C
100
10
TSD20H120CW
T
J
=150
o
C
10
1
UF1DLW
T
J
=150
o
C
T
J
=125°C
T
J
=100
o
C
0.01
0.001
0.0001
10
20
30
40
50
60
70
80
90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.01
0.1
0.001
T
J
=100
o
C
T
J
=25
o
C
0.4
0.5
0.6
0.7
0.8
Pulse width
0.9
1
1.1
1.2
T
J
=25
o
C
0.01
0.3
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
Fig.7
INSTANTANEOUS REVERSE CURRENT (mA)
Typical Reverse Characteristics
INSTANTANEOUS FORWARD CURRENT (A)
Fig.8 Typical Forward Characteristics
100
10
10
TSD20H150CW
1
T
J
=150
o
C
T
J
=125
o
C
TSD20H150CW
10
1
UF1DLW
T
J
=150
o
C
T
J
=125°C
T
J
=125
o
C
T
J
=25°C
(A)
0.1
T
J
=100
o
C
0.01
0.1
1
0.001
0.01
0.1
0.001
T
J
=100
o
C
T
J
=25
o
C
T
J
=25
o
C
0.3
0.4
0.5
0.6
0.7
0.8
Pulse width
0.9
1
1.1
1.2
0.0001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.01
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
5
Version:E1705
(A)
0.1
0.1
1
T
J
=125
o
C
T
J
=25°C
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