NSR02F30NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current. The DSN2 (Dual Silicon
No−lead) package is a chip level package using solderable metal
contacts under the package similar to DFN style packages. The DSN
style package enables 100% utilization of the package area for active
silicon, offering a significant performance per board area advantage
compared to products in plastic molded packages. The low thermal
resistance enables designers to meet the challenging task of achieving
higher efficiency and meeting reduced space requirements.
Features
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30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
•
•
•
•
Very Low Forward Voltage Drop − 370 mV @ 10 mA
Low Reverse Current − 7.0
mA
@ 10 V VR
200 mA of Continuous Forward Current
ESD Rating − Human Body Model: Class 3B
ESD Rating
− Machine Model: Class C
•
Very High Switching Speed
•
Low Capacitance − CT = 7 pF
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
MARKING
DIAGRAM
DSN2
(0201)
CASE 152AA
PIN 1
V230
YYY
V230
YYY
= Specific Device Code
= Year Code
PIN 1
QM
•
•
•
•
•
•
•
•
•
•
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Q
M
= Specific Device Code
= Month Code
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
ORDERING INFORMATION
Device
NSR02F30NXT5G
Package
Shipping†
DSN2
5000 / Tape & Reel
(Pb−Free)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current (DC)
Forward Surge Current
(60 Hz @ 1 cycle)
ESD Rating:
Human Body Model
Machine Model
ESD
Symbol
V
R
I
F
I
FSM
4.0
>8.0
>400
kV
V
Value
30
200
Unit
V
mA
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2010
1
June, 2017 − Rev. 3
Publication Order Number:
NSR02F30/D
NSR02F30NXT5G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Storage Temperature Range
Junction Temperature
Symbol
R
qJA
P
D
R
qJA
P
D
T
stg
T
J
Min
Typ
Max
400
312
170
735
−40 to +125
+125
Unit
°C/W
mW
°C/W
mW
°C
°C
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Leakage
(V
R
= 10 V)
(V
R
= 30 V)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 200 mA)
Total Capacitance
(V
R
= 5.0 V, f = 1 MHz)
Symbol
I
R
7.0
50
V
F
0.37
0.55
CT
Min
Typ
Max
Unit
mA
V
7.0
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NSR02F30NXT5G
PACKAGE DIMENSIONS
DSN2, 0.6x0.3, 0.4P, (0201)
CASE 152AA
ISSUE B
D
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM
A
A1
b
D
E
e
L
MILLIMETERS
MIN
MAX
0.24
0.30
0.00
0.01
0.20
0.22
0.30 BSC
0.60 BSC
0.40 BSC
0.10
0.12
2X
0.06 C
2X
E
0.06 C
TOP VIEW
0.05 C
A
MOUNTING FOOTPRINT*
0.28
SEATING
PLANE
2X
0.05 C
A1
SIDE VIEW
C
0.75
1
e
0.28
b
0.05 C A B
0.30
DIMENSIONS: MILLIMETERS
2X
L
2
2X
See Application Note AND8398/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
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4
NSR02F30/D
嵌入式系统
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