RUL035N02
Nch 20V 3.5A Power MOSFET
lOutline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
lFeatures
1) Low on - resistance.
2) 1.5V Drive.
3) Built-in G-S Protection Diode.
20V
43mW
3.5A
1.0W
TUMT6
SOT-363T
(6)
(5)
(4)
(1)
(2)
(3)
lInner
circuit
(1)
(2)
(3)
(4)
(5)
(6)
Drain
Drain
Gate
Source
Drain
Drain
4) Small Surface Mount Package (TUMT6).
5) Pb-free lead plating ; RoHS compliant
*1
ESD PROTECTION DIODE
*2
BODY DIODE
lPackaging
specifications
Packaging
lApplication
DC/DC converters
Type
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute
maximum ratings(T
a
= 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
DSS
I
D *1
I
D,pulse
V
GSS
P
D *3
P
D *4
T
j
T
stg
*2
Taping
180
8
3,000
TR
XD
Value
20
3.5
7
10
1.0
0.32
150
-55
to
+150
Unit
V
A
A
V
W
W
°C
°C
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© 2013 ROHM Co., Ltd. All rights reserved.
1/11
2013.02 - Rev.B
RUL035N02
lThermal
resistance
Parameter
Symbol
R
thJA *3
R
thJA *4
Values
Min.
-
-
Typ.
-
-
Data Sheet
Max.
125
391
Unit
°C/W
°C/W
Thermal resistance, junction - ambient
lElectrical
characteristics(T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Symbol
Conditions
Values
Min.
20
Typ.
-
Max.
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
V
ΔV
(BR)DSS
I
D
=1mA
ΔT
j
referenced to 25°C
I
DSS
I
GSS
V
GS (th)
ΔV
(GS)th
ΔT
j
V
DS
= 20V, V
GS
= 0V
V
GS
=
10V,
V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
I
D
=1mA
referenced to 25°C
V
GS
=4.5V, I
D
=3.5A
V
GS
=2.5V, I
D
=3.5A
-
-
-
0.3
-
-
-
-
-
-
-
3.2
20
-
-
-
-1.9
31
38
50
66
56
7.5
8.5
-
1
10
1.0
-
43
53
70
93
80
-
-
mV/°C
mA
mA
V
mV/°C
Static drain - source
on - state resistance
R
DS(on) *5
V
GS
=1.8V, I
D
=1.8A
V
GS
=1.5V, I
D
=0.7A
V
GS
=4.5V, I
D
=3.5A, T
j
=125°C
mW
Gate input resistannce
Transconductance
R
G
g
fs *5
f = 1MHz, open drain
V
DS
=10V, I
D
=3.5A
W
S
*1 Limited only by maximum temperature allowed.
*2 Pw
10ms, Duty cycle
1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
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© 2013 ROHM Co., Ltd. All rights reserved.
2/11
2013.02 - Rev.B
RUL035N02
lElectrical
characteristics(T
a
= 25°C)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on) *5
t
r *5
t
d(off)
t
f *5
*5
Data Sheet
Conditions
V
GS
= 0V
V
DS
= 10V
f = 1MHz
V
DD
⋍
10V, V
GS
= 4.5V
I
D
= 1.8A
R
L
= 5.6W
R
G
= 10W
Values
Min.
-
-
-
-
-
-
-
Typ.
460
110
60
10
20
40
50
Max.
-
-
-
-
-
-
-
Unit
pF
ns
lGate
Charge characteristics(T
a
= 25°C)
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g *5
Q
gs *5
Q
gd
*5
Conditions
Values
Min.
-
-
-
Typ.
5.7
1.1
0.9
Max.
-
-
-
Unit
V
DD
⋍
10, I
D
=3.5A
V
GS
= 4.5V
nC
lBody
diode electrical characteristics
(Source-Drain)(T
a
= 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage
Symbol
Conditions
Values
Min.
-
-
Typ.
-
-
Max.
0.8
1.2
Unit
I
S *1
V
SD *5
T
a
= 25°C
V
GS
= 0V, I
s
= 0.8A
A
V
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© 2013 ROHM Co., Ltd. All rights reserved.
3/11
2013.02 - Rev.B
RUL035N02
lElectrical
characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
Fig.2 Maximum Safe Operating Area
100
Operation in this area
is limited by R
DS
(on)
( V
GS
= 10V
）
Power Dissipation : P
D
/P
D
max. [%]
100
10
P
W
= 100ms
Drain Current : I
D
[A]
80
60
40
20
0
P
W
= 1ms
1
DC Operation
P
W
= 10ms
0.1
0
50
100
150
200
0.01
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
0.1
1
10
100
Junction Temperature : Tj [°C]
Drain - Source Voltage : V
DS
[V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
10
T
a
=25ºC
Single Pulse
1
D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
Rth(ch-a)=125ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm
×
30mm
×
0.8mm)
top
Fig.4 Single Pulse Maxmum Power
dissipation
1000
T
a
=25ºC
Single Pulse
Peak Transient Power : P(W)
100
0.1
10
0.01
0.001
0.0001
0.01
1
100
1
0.0001
0.01
1
100
Pulse Width : P
W
[s]
Pulse Width : P
W
[s]
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© 2013 ROHM Co., Ltd. All rights reserved.
4/11
2013.02 - Rev.B
RUL035N02
lElectrical
characteristic curves
Data Sheet
Fig.5 Typical Output Characteristics(I)
T
a
=25ºC
Pulsed
Fig.6 Typical Output Characteristics(II)
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
T
a
=25ºC
Pulsed
V
GS
=1.5V
3
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
3
Drain Current : I
D
[A]
Drain Current : I
D
[A]
2
V
GS
=1.5V
1
V
GS
=1.3V
V
GS
=1.1V
0
0
0.2
0.4
0.6
0.8
1
2
V
GS
=1.3V
1
V
GS
=1.2V
V
GS
=1.1V
0
0
2
4
6
8
10
Drain - Source Voltage : V
DS
[V]
Drain - Source Voltage : V
DS
[V]
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V
(BR)DSS
[V]
60
V
GS
= 0V
I
D
= 1mA
pulsed
Fig.8 Typical Transfer Characteristics
20
0
-50
0
50
100
150
Junction Temperature : T
j
[
°C
]
Drain Current : I
D
[A]
40
Gate - Source Voltage : V
GS
[V]
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© 2013 ROHM Co., Ltd. All rights reserved.
5/11
2013.02 - Rev.B
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