VS-300CNQ045PbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 300 A
FEATURES
Lug
terminal
anode 1
Lug
terminal
anode 2
• 150 °C T
J
operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
TO-244
Base common
cathode
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
Package
Circuit configuration
300 A
45 V
TO-244
Two diodes common cathode
DESCRIPTION / APPLICATIONS
The VS-300CNQ... center tap Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
150 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
300
45
27 000
0.56
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-300CNQ045PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
per
device
I
F(AV)
50 % duty cycle at T
C
= 111 °C, rectangular waveform
300
A
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 18 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
27 000
2400
150
30
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
150
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 09-May-17
Document Number: 94175
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-300CNQ045PbF
www.vishay.com
Vishay Semiconductors
SYMBOL
150 A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.61
0.77
0.56
0.75
15
1100
7750
6.0
10 000
mA
pF
nH
V/μs
V
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
300 A
150 A
300 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature
range
Thermal resistance,
junction to case
per leg
per module
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
MIN.
- 55
-
-
-
-
-
35.4 (4)
30 (3.4)
30 (3.4)
-
-
TYP.
-
-
-
0.10
68
2.4
-
-
-
-
-
MAX.
150
0.28
0.14
-
-
-
53.1 (6)
40 (4.6)
44.2 (5)
80
35
lbf
⋅
in
lbf
⋅
in
(N
⋅
m)
g
oz.
°C/W
UNITS
°C
Thermal resistance, case to heatsink
Weight
Mounting torque
Mounting torque center hole
Terminal torque
Vertical pull
2" lever pull
1000
10 000
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (mA)
1000
100
10
1
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 09-May-17
Document Number: 94175
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-300CNQ045PbF
www.vishay.com
10 000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
0
5
10
15
20
25
30
35
40
45
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
0.01
Single pulse
(thermal resistance)
0.001
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.0001
0.001
0.01
0.1
1.0
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
160
140
RMS limit
Allowable Case Temperature (°C)
140
DC
120
Average Power Loss (W)
120
100
80
60
40
20
0
DC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
100
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
60
0
50
100
150
200
250
80
0
50
100
150
200
250
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 09-May-17
Document Number: 94175
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-300CNQ045PbF
www.vishay.com
I
FSM
- Non-Repetitive Surge Current (A)
100 000
At any rated load condition
and with rated V
RRM
applied
following surge
Vishay Semiconductors
10 000
1000
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
ORDERING INFORMATION TABLE
Device code
VS-
1
30
2
-
-
-
-
-
-
-
-
0
3
C
4
N
5
Q
6
045 PbF
7
8
1
2
3
4
5
6
7
8
Vishay Semiconductors product
Average current rating (x 10)
Product silicon identification
C = circuit configuration
N = not isolated
Q = Schottky rectifier diode
Voltage rating (045 = 45 V)
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95021
Revision: 09-May-17
Document Number: 94175
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-244
DIMENSIONS
in millimeters (inches)
35 (1.37) REF.
13 (0.51)
7 (0.27)
6 (0.23)
40 (1.57)
80 (3.15)
17.5 (0.69)
16.5 (0.65)
Ø 5.2 (Ø 0.20)
3
12.6 (0.5)
1
2
3
21 (0.82)
20 (0.78)
Ø 7.2 (Ø 0.28)
(2 places)
¼" - 20 UNC
9.6 (0.37) MIN.
93 (3.66) MAX.
Revision: 24-Apr-15
Document Number: 95021
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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