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NS2029M3T5G

产品描述Bipolar Transistors - BJT SS XTR PNP MTK SOT723
产品类别分立半导体    晶体管   
文件大小50KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NS2029M3T5G概述

Bipolar Transistors - BJT SS XTR PNP MTK SOT723

NS2029M3T5G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
包装说明SMALL OUTLINE, R-PDSO-F3
针数3
制造商包装代码631AA
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SINGLE
最小直流电流增益 (hFE)120
JESD-30 代码R-PDSO-F3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型PNP
最大功率耗散 (Abs)0.265 W
认证状态Not Qualified
表面贴装YES
端子面层Tin (Sn)
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间40
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)140 MHz

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NS2029M3
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SOT−723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
www.onsemi.com
Reduces Board Space
High h
FE
, 210 −460 (Typical)
Low V
CE(sat)
, < 0.5 V
ESD Performance: Human Body Model;
u
2000 V,
Machine Model;
u
200 V
Available in 8000 Unit Tape & Reel with 2 mm Pitch
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
−60
−50
−6.0
−150
Unit
Vdc
Vdc
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
SOT−723
CASE 631AA
2
1
Vdc
mAdc
9F M
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
265
150
−55 ~ + 150
Unit
mW
°C
°C
9F = Specific Device Code
M = Date Code*
*Date Code orientation and/or position may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
minimum recommended footprint.
ORDERING INFORMATION
Device
NS2029M3T5G
NSV2029M3T5G
Package
SOT−723
(Pb−Free)
SOT−723
(Pb−Free)
Shipping
8000/Tape & Reel
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
October, 2015 − Rev. 5
Publication Order Number:
NS2029M3/D

NS2029M3T5G相似产品对比

NS2029M3T5G NSV2029M3T5G
描述 Bipolar Transistors - BJT SS XTR PNP MTK SOT723 Bipolar Transistors - BJT SS XTR PNP SOT723MTK

 
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