IGBT Transistors IGBT & Power Bipolar
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ST(意法半导体) |
产品种类 Product Category | IGBT Transistors |
RoHS | Details |
技术 Technology | Si |
封装 / 箱体 Package / Case | TO-247-3 |
安装风格 Mounting Style | Through Hole |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1200 V |
Collector-Emitter Saturation Voltage | 2.1 V |
Maximum Gate Emitter Voltage | 20 V |
Continuous Collector Current at 25 C | 80 A |
Pd-功率耗散 Pd - Power Dissipation | 468 W |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 175 C |
系列 Packaging | Tube |
Continuous Collector Current Ic Max | 80 A |
Gate-Emitter Leakage Current | 250 nA |
NumOfPackaging | 1 |
工厂包装数量 Factory Pack Quantity | 600 |
单位重量 Unit Weight | 1.340411 oz |
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