BUV26
Switchmode Series NPN
Silicon Power Transistor
Designed for high−speed applications.
Features
•
•
•
•
•
Switchmode Power Supplies
High Frequency Converters
Relay Drivers
Driver
These Devices are Pb−Free and are RoHS Compliant*
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12 AMPERES
NPN SILICON
POWER TRANSISTORS
90 VOLTS, 85 WATTS
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
W
W
°C
4
TO−220AB
CASE 221A
STYLE 1
1
BUV26G
AYWW
1
BASE
3
EMITTER
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak (pw 10 ms)
Base Current
−
Continuous
Base Current
−
Peak
Total Power Dissipation @ T
C
= 25°C
Total Power Dissipation @ T
C
= 60°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO(sus)
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
P
D
T
J
, T
stg
Value
90
180
7.0
20
30
4.0
6.0
85
65
−
65 to +175
SCHEMATIC
COLLECTOR
2,4
MARKING
DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
R
qJC
Max
1.76
Unit
°C/W
2
3
BUV26
A
Y
WW
G
1
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
BUV26G
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
August, 2013
−
Rev. 5
1
Publication Order Number:
BUV26/D
BUV26
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 200 mA, I
B
= 0, L = 25 mH)
Collector Cutoff Current at Reverse Bias
(V
CE
= 180 V, V
BE
=
−1.5
V, T
C
= 125°C)
Emitter Base Reverse Voltage
(I
E
= 50 mA)
Emitter Cutoff Current
(V
EB
= 5.0 V)
Collector Cutoff Current
(V
CE
= 180 V, R
BE
= 50
W,
T
C
= 125°C)
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(I
C
= 6.0 A, I
B
= 0.4 A)
(I
C
= 12 A, I
B
= 1.2 A)
Base−Emitter Saturation Voltage
(I
C
= 12 A, I
B
= 1.2 A)
SWITCHING CHARACTERISTICS (Resistive Load)
Turn On Time
Storage Time
Fall Time
Storage Time
Fall Time
I
C
= 12 A, I
B
= 1.2 A
V
CC
= 50 V, V
BE
= 6.0 V
RB2 = 2.5
W
V
CC
= 50 V, I
C
= 12 A
I
B(end)
= 1.2 A, V
B
= 5.0 V
L
B
= 0.5 pH, T
J
= 125°C
t
on
t
s
t
f
T
s
T
f
−
−
−
−
−
0.6
1.0
0.15
2.0
.15
ms
ms
V
CE(sat)
Vdc
−
−
−
0.6
1.5
Vdc
2.0
V
CEO(sus)
I
CEX
V
EBO
I
EBO
I
CER
Vdc
90
−
7.0
−
−
−
mAdc
1.0
V
30
mAdc
1.0
mAdc
3.0
Symbol
Min
Max
Unit
V
BE(sat)
SWITCHING CHARACTERISTICS (Inductive Load)
1. Pulse Test: Pulse width
p
300
ms;
Duty cycle
p
2%.
http://onsemi.com
2
BUV26
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
4
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
F
T
C
S
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 1:
PIN 1.
2.
3.
4.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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4
BUV26/D
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