TSM3400
30V N-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
28 @ V
GS
= 10V
30
33 @ V
GS
= 4.5V
52 @ V
GS
= 2.5V
I
D
(A)
5.8
5.0
4.0
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
TSM3400CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation @ Ta = 25 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
o
a,b
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Limit
30
±12
5.8
30
2.5
1.4
+150
-55 to +150
Unit
V
V
A
A
A
W
o
o
C
C
Thermal Performance
Parameter
Junction to Foot Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
10 sec.
Symbol
RӨ
JF
RӨ
JA
Limit
70
90
Unit
o
o
C/W
C/W
1/1
Version: A09
TSM3400
30V N-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Conditions
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±12V, V
DS
= 0V
V
DS
= 24V, V
GS
= 0V
V
DS
= 5V, V
GS
= 4.5V
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 5A
V
GS
= 2.5V, I
D
= 4A
V
DS
= 5V, I
D
= 5A
I
S
= 1.0A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Min
30
0.7
--
--
20
--
--
--
10
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
--
23
28
43
15
0.76
9.7
1.63
3.1
857
97
71
3.3
4.7
26
4.1
Max
--
1.4
±100
1.0
--
28
33
52
--
1.0
12
--
--
1030
--
--
5
7
39
6.2
Unit
V
V
nA
µA
A
mΩ
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 15V, I
D
= 5.8A,
V
GS
= 10V
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= 15V, R
L
= 1.8Ω,
I
D
= 1A, V
GEN
= 10V,
nS
R
G
= 6Ω
Turn-Off Fall Time
t
f
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/2
Version: A09
TSM3400
30V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/3
Version: A09
TSM3400
30V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25ºC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/4
Version: A09
TSM3400
30V N-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Marking Diagram
40
= Device Code
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
5/5
Version: A09
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