Data Sheet
Dual High-efficiency PWM Step-down DC-DC Converter with OVP
AUR9707
General Description
The AUR9707 is a high efficiency step-down
DC-DC voltage converter. The chip operation is
optimized using constant frequency, peak-current
mode architecture with built-in synchronous power
MOSFET switchers and internal compensators to
reduce external part counts. It is automatically
switching between the normal PWM mode and LDO
mode to offer improved system power efficiency
covering a wide range of loading conditions.
The oscillator and timing capacitors are all built-in
providing an internal switching frequency of 1.5MHz
that allows the use of small surface mount inductors
and capacitors for portable product implementations.
Additional features included Soft Start (SS), Under
Voltage Lock Out (UVLO), Input Over Voltage
Protection (IOVP) and Thermal Shutdown Detection
(TSD) are integrated to provide reliable product
applications.
The device is available in adjustable output voltage
versions ranging from 1V to 3.3V, and is able to
deliver up to 1A.
The AUR9707 is available in WDFN-3×3-12
package.
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Dual Channel High Efficiency Buck Power
Converter
Low Quiescent Current
Output Current: 1A
Adjustable Output Voltage from 1V to 3.3V
Wide Operating Voltage Range: 2.5V to 5.5V
Built-in Power Switches for Synchronous
Rectification with High Efficiency
Feedback Voltage: 600mV
1.5MHz Constant Frequency Operation
Automatic PWM/LDO Mode Switching Control
Thermal Shutdown Protection
Low Drop-out Operation at 100% Duty Cycle
No Schottky Diode Required
Internal Input Over Voltage Protection
Applications
•
•
•
•
Mobile Phone, Digital Camera and MP3 Player
Headset, Radio and Other Hand-held Instrument
Post DC-DC Voltage Regulation
PDA and Notebook Computer
WDFN-3×3-12
Figure 1. Package Type of AUR9707
Feb. 2012
Rev. 1. 1
1
BCD Semiconductor Manufacturing Limited
Data Sheet
Dual High-efficiency PWM Step-down DC-DC Converter with OVP
AUR9707
Pin Configuration
D Package
(WDFN-3×3-12)
Pin 1 Dot
by Marking
1
2
3
4
5
6
12
11
Exposed
Pad
10
9
8
7
Figure 2. Pin Configuration of AUR9707 (Top View)
Pin Description
Pin Number
1
2
3, 9
4
5, 11
6
7
8
10
12
Pin Name
VIN2
LX2
GND
FB1
NC1,NC2
EN1
VIN1
LX1
FB2
EN2
Function
Power supply input of channel 2
Connection from power MOSFET of channel 2 to inductor
This pin is the GND reference for the NMOSFET power stage. It
must be connected to the system ground
Feedback voltage of channel 1
No internal connection (floating or connecting to GND)
Enable signal input of channel 1, active high
Power supply input of channel 1
Connection from power MOSFET of channel 1 to inductor
Feedback voltage of channel 2
Enable signal input of channel 2, active high
Feb. 2012
Rev. 1. 1
2
BCD Semiconductor Manufacturing Limited
Data Sheet
Dual High-efficiency PWM Step-down DC-DC Converter with OVP
AUR9707
Functional Block Diagram
EN1 , EN2
6 ,12
Saw-tooth
Generator
Oscillator
Over Current
Comparator
VIN1 , VIN2
7,1
Bias
Generator
+
Current
Sensing
4 , 10
Soft
Start
FB1 , FB2
-
+
Error
Amplifier
+
-
Modulator
Control
Logic
Buffer &
Dead Time
Control
Logic
8,2
LX1 , LX2
-
+
Reverse Inductor
Current Comparator
Thermal
Shutdown
-
+
Bandgap
Reference
Over Voltage
Comparator
3,9
GND
Figure 3. Functional Block Diagram of AUR9707
Ordering Information
AUR9707
A
Circuit Type
A: Adjustable Output
5
Package
D: WDFN-3×3-12
G: Green
Package
WDFN-3×3-12
Temperature
Range
-40 to 80°C
Part Number
AUR9707AGD
Marking ID
9707A
Packing Type
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G" in the part number, are RoHS compliant and
green.
Feb. 2012
Rev. 1. 1
3
BCD Semiconductor Manufacturing Limited
Data Sheet
Dual High-efficiency PWM Step-down DC-DC Converter with OVP
AUR9707
Absolute Maximum Ratings (Note 1)
Parameter
Supply Input Voltage
Enable Input Voltage
Output Voltage
V
IN1
-V
IN2
Voltage (Note 2)
Power Dissipation (On PCB, T
A
=30°C)
Thermal Resistance (Junction to Ambient, Simulation)
Thermal Resistance (Junction to Case, Simulation)
Operating Junction Temperature
Operating Temperature
Storage Temperature
ESD (Human Body Model)
ESD (Machine Model)
Symbol
V
IN
V
EN
V
OUT
V
DF
P
D
θ
JA
θ
JC
T
J
T
O
T
S
V
HBM
V
MM
Value
0 to 6.5
-0.3 to V
IN
+0.3
-0.3 to V
IN
+0.3
-0.3 to 0.3
2.31
41
4.2
160
-40 to 85
-55 to 150
2000
200
Unit
V
V
V
V
W
°C/W
°C/W
°C
°C
°C
V
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2:│V
IN1
-V
IN2
│voltage
difference can not exceed 0.3V, otherwise, the chip will be damaged.
Recommended Operating Conditions
Parameter
Supply Input Voltage
Junction Temperature Range
Ambient Temperature Range
Symbol
V
IN
T
J
T
A
Min
2.5
-20
-40
Max
5.5
125
80
Unit
V
°C
°C
Feb. 2012
Rev. 1. 1
4
BCD Semiconductor Manufacturing Limited
Data Sheet
Dual High-efficiency PWM Step-down DC-DC Converter with OVP
AUR9707
Electrical Characteristics
V
IN
=3.6V, V
OUT
=2.5V, V
REF
=0.6V, L=2.2µH, C
IN
=4.7µF, C
OUT
=10µF, T
A
=25°C, I
MAX
=1A.
Parameter
Input Voltage Range
Shutdown Current
Regulated1Feedback
Voltage
Regulated
Output
Voltage Accuracy
Peak
Inductor
Current
Oscillator Frequency
PMOSFET R
ON
NMOSFET R
ON
Input
DC
Current
Bias
Symbol
V
IN
I
OFF
V
FB
∆V
OUT
/V
OUT
I
PK
f
OSC
R
ON(P)
R
ON(N)
I
S
I
LX
I
FB
V
LOVP
I
EN
V
EN_H
V
EN_L
V
EN
=0
Conditions
Min Typ Max Unit
2.5
0.1
0.585
-3
1.5
1.2
1.5
0.28
0.38
0.25
0.35
0.01
0.1
30
6
0.01
0.1
1.8
0.6
5.5
1
0.615
3
V
µA
V
%
A
MHz
Ω
Ω
µA
µA
nA
V
µA
V
0.6
1.8
0.1
V
V
V
°C
For Adjustable Output Voltage
V
IN
=2.5V to 5.5V;
I
OUT
=0 to 1A
V
IN
=3V, V
FB
=0.5V
V
IN
=3.6V
V
IN
=3.6V, I
OUT
=200mA
V
IN
=2.5V, I
OUT
=200mA
V
IN
=3.6V, I
OUT
=200mA
V
IN
=2.5V, I
OUT
=200mA
V
IN
=5V, V
EN
=0V, V
LX
=0V or
5V
LX Leakage Current
Feedback Current
Input Over Voltage
Protection
EN Leakage Current
EN High-level Input
Voltage
EN Low-Level Input
Voltage
Under Voltage Lock
Out
Hysteresis
Thermal Shutdown
V
IN
=2.5V to 5.5V
V
IN
=2.5V to 5.5V
1.5
T
SD
150
Feb. 2012
Rev. 1. 1
5
BCD Semiconductor Manufacturing Limited
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