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CMPD6001C-TR

产品描述Diodes - General Purpose, Power, Switching Dual Common Cathode Low Leakage
产品类别半导体    分立半导体   
文件大小982KB,共4页
制造商Central Semiconductor
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CMPD6001C-TR概述

Diodes - General Purpose, Power, Switching Dual Common Cathode Low Leakage

CMPD6001C-TR规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Central Semiconductor
产品种类
Product Category
Diodes - General Purpose, Power, Switching
RoHSDetails
产品
Product
Switching Diodes
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-23
Peak Reverse Voltage100 V
Max Surge Current4 A
If - Forward Current250 mA
ConfigurationDual Common Cathode
Vf - Forward Voltage0.95 V
Ir - Reverse Current500 pA
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
Frequency Range1 MHz
Maximum Diode Capacitance2 pF
NumOfPackaging3
Pd-功率耗散
Pd - Power Dissipation
350 mW
工厂包装数量
Factory Pack Quantity
3000
单位重量
Unit Weight
0.000282 oz

文档预览

下载PDF文档
CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
SURFACE MOUNT SILICON
ULTRA LOW LEAKAGE
SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD6001 series
devices are silicon switching diodes manufactured by
the epitaxial planar process, designed for switching
applications requiring an extremely low leakage diode.
SOT-23 CASE
The following
CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
configurations are available:
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MARKING
MARKING
MARKING
MARKING
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
CODE:
CODE:
CODE:
CODE:
ULO
ULA
ULC
ULS
UNITS
V
V
mA
mA
A
A
mW
°C
°C/W
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
IR
BVR
VF
VF
VF
CJ
trr
75
100
250
250
4.0
1.0
350
-65 to +150
357
CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
MAX
VR=75V
500
IR=100μA
100
IF=1.0mA
IF=10mA
IF=100mA
VR=0, f =1.0MHz
IR=IF=10mA, Irr=1.0mA, RL=100Ω
0.85
0.95
1.1
2.0
3.0
UNITS
pA
V
V
V
V
pF
μs
R6 (16-February 2017)

 
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