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CMLT3904EG-TR

产品描述Bipolar Transistors - BJT NPN Complementary Enhanced
产品类别半导体    分立半导体   
文件大小442KB,共3页
制造商Central Semiconductor
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CMLT3904EG-TR概述

Bipolar Transistors - BJT NPN Complementary Enhanced

CMLT3904EG-TR规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Central Semiconductor
产品种类
Product Category
Bipolar Transistors - BJT
技术
Technology
Si
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-563-6
Transistor PolarityNPN
ConfigurationDual
Collector- Emitter Voltage VCEO Max40 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO6 V
Maximum DC Collector Current200 mA
Gain Bandwidth Product fT300 MHz
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max240 at 0.1 mA at 1 V
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
DC Collector/Base Gain hfe Min90 at 0.1 mA at 1 V
NumOfPackaging3
Pd-功率耗散
Pd - Power Dissipation
350 mW
工厂包装数量
Factory Pack Quantity
3000
单位重量
Unit Weight
0.000106 oz

文档预览

下载PDF文档
CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices
are combinations of dual, enhanced specification
transistors in a space saving SOT-563 package,
designed for small signal general purpose amplifier
and switching applications.
MARKING CODES: CMLT3904E:
CMLT3906E:
CMLT3946E:
CMLT3904EG*:
CMLT3906EG*:
CMLT3946EG*:
L04
L06
L46
C4G
C6G
46G
SOT-563 CASE
*
Device is
Halogen Free
by design
ENHANCED SPECIFICATIONS:
BVCBO from 40V MIN to 60V MIN (PNP)
BVEBO from 5.0V MIN to 6.0V MIN (PNP)
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
hFE from 60 MIN to 70 MIN (NPN/PNP)
VCE(SAT) from 0.3V MAX to 0.2V MAX (NPN)
from 0.4V MAX to 0.2V MAX (PNP)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mW
mW
mW
°C
°C/W
60
40
6.0
200
350
300
150
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
ICEV
VCE=30V, VEB=3.0V
-
-
-
50
BVCBO
IC=10μA
60
115
90
-
BVCEO
BV
EBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V,
VCE=1.0V,
VCE=1.0V,
VCE=1.0V,
VCE=1.0V,
IC=0.1mA
IC=1.0mA
IC=10mA
IC=50mA
IC=100mA
40
6.0
-
-
0.65
-
90
100
100
70
30
60
7.5
0.057
0.100
0.75
0.85
240
235
215
110
50
55
7.9
0.050
0.100
0.75
0.85
130
150
150
120
55
-
-
0.100
0.200
0.85
0.95
-
-
300
-
-
UNITS
nA
V
V
V
V
V
V
V
Enhanced Specification
Notes:
(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
2
R7 (16-December 2015)

CMLT3904EG-TR相似产品对比

CMLT3904EG-TR CMLT3906E CMLT3904E CMLT3946EG-TR
描述 Bipolar Transistors - BJT NPN Complementary Enhanced Bipolar Transistors - BJT PNP Complementary Enhanced Bipolar Transistors - BJT NPN Complementary Enhanced Bipolar Transistors - BJT NPN/PNP Complemntry

 
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