Freescale Semiconductor
Technical Data
Document Number: MRF6VP3091N
Rev. 2, 10/2015
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadcast and commercial aerospace broadband applications
with frequencies from 470 to 1215 MHz.
Typical Performance (UHF 470--860 Reference Circuit): V
DD
= 50 Volts,
I
DQ
= 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
P
out
(W)
18 Avg.
f
(MHz)
470
650
860
G
ps
(dB)
21.8
21.6
21.7
D
(%)
31.0
26.4
27.6
Output
Signal PAR
(dB)
7.9
8.4
7.1
IMD
Shoulder
(dBc)
--27.8
--37.6
--30.4
MRF6VP3091N
MRF6VP3091NB
Signal Type
DVB--T (8k OFDM)
470-
-1215 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
Typical Performance (L--Band 960--1215 MHz Circuit): V
DD
= 50 Volts,
I
DQ
= 100 mA.
Signal Type
Pulse
(128
sec,
10% Duty
Cycle)
P
out
(W)
90 Peak
f
(MHz)
960
1030
1090
1215
P
in
(W)
1.3
1.41
1.65
1.68
G
ps
(dB)
18.4
18
17.4
17.3
D
(%)
55.3
56.9
50.7
51.0
TO-
-270WB-
-4
PLASTIC
MRF6V3090N
Features
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Input Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Excellent Thermal Stability
Device can be used Single--Ended or in a Push--Pull Configuration
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
TO-
-272WB-
-4
PLASTIC
MRF6V3090NB
PARTS ARE PUSH-
-PULL
Gate 1
Drain 1
Gate 2
Drain 2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2011, 2015. All rights reserved.
MRF6VP3091N MRF6VP3091NB
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +115
--6.0, +10
--65 to +150
150
225
Unit
Vdc
Vdc
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76C, 18 W CW, 50 Vdc, I
DQ
= 350 mA, 860 MHz
Case Temperature 80C, 90 W CW, 50 Vdc, I
DQ
= 350 mA, 860 MHz
Symbol
R
JC
Value
(2,3)
0.79
0.82
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (2001--4000 V)
B (201--400 V)
IV (>1000 V)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(I
D
= 50 mA, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 100
Adc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 350 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 0.25 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(5)
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(5)
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(5)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
41
65.4
591
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
0.9
2.0
—
1.6
2.7
0.2
2.4
3.5
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
115
—
—
—
—
—
—
0.5
—
10
20
Adc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
5. Part internally input matched.
(continued)
MRF6VP3091N MRF6VP3091NB
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Single--Ended Narrowband Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 350 mA, P
out
= 18 W Avg.,
f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @
4
MHz Offset @ 4 kHz Bandwidth.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
D
ACPR
IRL
21.0
27.5
—
—
22.0
28.5
--62.0
--14
24.0
—
--60.0
--9
dB
%
dBc
dB
Table 6. Ordering Information
Device
MRF6V3090NR1
MRF6V3090NBR1
MRF6V3090NR5
MRF6V3090NBR5
Tape and Reel Information
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
Package
TO--270WB--4
TO--272WB--4
TO--270WB--4
TO--272WB--4
MRF6VP3091N MRF6VP3091NB
RF Device Data
Freescale Semiconductor, Inc.
3
V
BIAS
+
C1
R1
C2
C3
Z8
Z10
C4 R2
+
C8
C9
C10
V
SUPPLY
RF
INPUT
Z1
C5
Z2
Z3
Z4
Z5
Z6
Z7
DUT
Z9
Z12
Z13
Z14
Z15 Z16
Z17
C14
Z18
RF
OUTPUT
C6
C7
Z11
C15
C11
C12
C13
+
C16
C17
C18
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.266
0.067 Microstrip
0.331
0.067 Microstrip
0.598
0.067 Microstrip
0.315
0.276 Microstrip
0.054
0.669 Microstrip
0.419
0.669 Microstrip
0.256
0.669 Microstrip
0.986
0.071 Microstrip
0.201
0.571 Microstrip
Z10, Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
1.292
0.079 Microstrip
0.680
0.571 Microstrip
0.132
0.117 Microstrip
0.705
0.117 Microstrip
0.159
0.117 Microstrip
0.140
0.067 Microstrip
0.077
0.067 Microstrip
0.163
0.067 Microstrip
Figure 2. MRF6VP3091N 860 MHz Single-
-Ended Narrowband Test Circuit Schematic
Table 7. MRF6VP3091N 860 MHz Single-
-Ended Narrowband Test Circuit Component Designations and Values
Part
C1
C2, C9, C17
C3, C5, C8, C14, C16
C4
C6
C7
C10, C18
C11, C15
C12
C13
R1
R2
PCB
Description
22
F,
35 V Tantalum Capacitor
10
F,
50 V Chip Capacitors
43 pF Chip Capacitors
6.2 pF Chip Capacitor
2.2 pF Chip Capacitor
9.1 pF Chip Capacitor
220
F,
100 V Electrolytic Capacitors
7.5 pF Chip Capacitors
3.0 pF Chip Capacitor
0.7 pF Chip Capacitor
10 k, 1/4 W Chip Resistor
10
,
1/4 W Chip Resistor
0.030,
r
= 3.5
Part Number
T491X226K035AT
GRM55DR61H106KA88L
ATC100B430JT500XT
ATC100B6R2BT500XT
ATC100B2R2JT500XT
ATC100B9R1CT500XT
EEVFK2A221M
ATC100B7R5CT500XT
ATC100B3R0CT500XT
ATC100B0R7BT500XT
CRCW120610KOJNEA
CRCW120610ROJNEA
RF--35
Manufacturer
Kermet
Murata
ATC
ATC
ATC
ATC
Panasonic--ECG
ATC
ATC
ATC
Vishay
Vishay
Taconic
MRF6VP3091N MRF6VP3091NB
4
RF Device Data
Freescale Semiconductor, Inc.
C1
C10
C8
R1
C2
C3
C9
C4
R2
CUT OUT AREA
C15
C11
C5
C6
C7
MRF6V3090N
Rev. 0
C12
C16
C17
C18
--
Figure 3. MRF6VP3091N 860 MHz Single-
-Ended Narrowband Test Circuit Component Layout
MRF6VP3091N MRF6VP3091NB
RF Device Data
Freescale Semiconductor, Inc.
5
--
C14
C13
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